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STP3NB60 STP3NB60FP N - CHANNEL ENHANCEMENT MODE PowerMESHTM MOSFET TYPE V DSS R DS(on) ID STP3NB60 600 V <3.6 3.3 A STP3NB60FP 600 V < 3.6 2.2 A s TYPICAL RDS(on) = 3.3 s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES s GATE CHARGE MINIMIZED 3 3 2 2 DESCRIPTION 1 1 Using the latest high voltage MESH OVERLAYTM process, SGS-Thomson has designed an TO-220 TO-220FP advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge INTERNAL SCHEMATIC DIAGRAM and switching characteristics. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Uni t STP3NB60 STP3NB60FP V DS Drain-source Voltage (V GS = 0) 600 V V DGR Drain- gate Voltage (R GS = 20 k) 600 V V GS Gate-source Voltage