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Electronics > Components > Rficsolutions Inc. > ( there are 23 files in this category )

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..		RJVC01 is 0.5 - 1.15 GHz, voltage controlled oscillator. It can operate at 1.2 V supply and consumes only 2.5 mA current. The tuning bandwidth of the oscillator is 650 MHz with good phase noise performance.
RJVC01.pdf		RJVC02 is 2.0 - 6.0 GHz, voltage controlled oscillator. It can operate at 1.8 V supply and consumes only 1.0 mA current. The tuning bandwidth of the oscillator is 4 GHz with good phase noise performance.
RJVC02.pdf		RJVC02 is 2.0 - 6.0 GHz, voltage controlled oscillator. It can operate at 1.8 V supply and consumes only 1.0 mA current. The tuning bandwidth of the oscillator is 4 GHz with good phase noise performance.
RJVC02.pdf		The GEDA01 is 7.0 GHz to 20.0 GHz low power single stage buffer amplifier. The amplifier is designed using 2 μm InGaP HBT Technology for high frequency applications. Driver amplifier shows gain of 4.5 dB at 20 GHz with power output of 9 dBm. It operates at 4.2 Volts.
GEDA01.pdf
The GEDA02 is 20 GHz to 40 GHz low power buffer amplifier. The amplifier is designed using 2 μm InGaP HBT process for high frequency applications. Driver amplifier shows gain of 1dB at 40 GHz with power output of 0dBm. It operates at 4.2Volts.
GEDA02.pdf		The GEV03 is 15 to 20 GHz broadband VCO designed on 2 um GaAs HBT process. The device is designed for high frequency applications. The resonator part is split into on-chip inductor and offchip varactor. The GEV03 consumes only 3.5 mA current. The phase noise of the GEV03 can be improved using the high Q off chip resonator.
GEVO3.pdf		The GRDA1 is 10 GHz to 20 GHz differential amplifier designed on 2 um InGaP HBT process. The gain of GRDA1 is 5 dB typically with flatness of ±3dB over the entire bandwidth. Typical current requirement for GRDA1 is 24 mA. The one dB compression point of GRDA1 lies at -5 dBm input power. It can be used as single to differential converter, differential to single converter.
GRDA1.pdf		The GRFM1 is 10 GHz to 20 GHz Frequency multiplier designed on 2 um InGaP HBT process. GRFM1 multiplies the input frequency from 10 GHz to 20 GHz by the factor of 2 so as to produce the output of 20 GHz to 40 GHz. Conversion gain of frequency multiplier is 0dB ±2dB. Power requirement of Frequency multiplier is 2 mA at 4.2 V.
GRFM1.pdf		The GRO1 is high performance 14-16 GHz oscillator with off-chip resonator and it is designed on 2 um InGaP HBT Technology. It requires the High Q external resonator. The VCO is taking only 3.5 mA current and the layout is very small. Functional Diagram . The simulation is done using Series Resonator with Q = 200.
GRO1.pdf
The GRV02 is 10 to 15 GHz; broadband VCO designed on 2 um GaAs HBT Technology. The resonator part is split on-chip inductor and off-chip Varactor. The VCO consumes only 3.5 mA current and the layout is very tiny. The phase noise of the GEV03 can be improved using the high Q off chip resonator. Functional Diagram . The buffer Amplifier is followed by the VCO to improve the output.
GRVO2.pdf		The GRV03 is 14 to 21 GHz: broadband Negative Resistance Generator designed using 2 um HBT Technology. The GRV03 consumes only 4 mA current and the die area is very small. The phase noise of the oscillator can be improved using external high Q resonator. Functional Diagram . The buffer Amplifier is followed by the VCO to improve the output power.
GRVO3.pdf		RGDIV01 is a low noise divide by 8 static divider utilizing InGaP HBT technology. The device operates from 7 to 20 GHz.
RGDIV01.pdf		The RJCT01 is a CATV Line Amplifier IP block, designed on 0.18um SiGe BiCMOS technology. The amplifier provides low distortion and noise figure along with flat gain. The part works with a supply Voltage of +6.0 V. This can operates from 40 to 870 MHz band with 20 dB gain. The device is unconditionally stable throughout the band.
RJCT01_CATV Line amplifier_.pdf		The RJL01 is 1.5 to 1.7 GHz, Low Noise Amplifier IP Block. The LNA is designed on the 0.18um SiGe BiCMOS Process. The device is designed for GPS system. The LNA has provision for mode control to turn off. It requires a single +3.0 Volt supply and consumes only 12 mA current. The simulated noise figure is 0.5 at 1.575 GHz.
RJL01_1.5_1.7GHz_GPS_LNA_.pdf
The RJL02 is 1575 MHz narrow band Low Noise Amplifier IP Block. The LNA is designed on the 0.18um SiGe BiCMOS Process. The device is designed for GPS system Application. The LNA die area is 0.8 mm x 0.7 mm. It has two off chip components at input side. It requires a single +3.0 Volt supply to operate and consumes 4.93 mA current.
RJL02 _GPS LNA_.pdf		The RJM01 is 1.6 to 3.0 GHz; Low noise, Gilbert Cell down conversion SiGe Mixer designed on 0.35 μm SiGe BiCMOS technology. The device is designed for 802.11 b/g standard and WLAN MIMO system. Functional Diagram . The noise figure is 4.43 dB and it has small die area of 0.6 mm x 0.55 mm. The device works with single +3.3 V supply voltage and draws 48 mA of current.
RJM01_1.6_3GHz_Gillbert cell Mixer_.pdf		The RJP01 is 1.920 to 1.980 GHz high efficiency WCDMA Power Amplifier. The Amplifier is designed using 0.18 um SiGe BiCMOS technology. Power amplifier shows PAE of 41% at 28 dBm with off-chip output matching. It has been designed specially for use in WCDMA application. It operates from 3.2 V to 4.2 V power supply.
RJP01 _1.9GHz_WCDMA_PA_.pdf		The RJPA04 is 3.4 to 3.6 GHz; high efficiency SiGe BiCMOS power amplifier. The device is designed to provide high efficiency with good power output for WiMax applications. The device consumes 310 mA and it gives the power output of 28 dBm at P1 dB compression point.
RJP04__3.4_3.6GHz_SiGe BiCMOS_PA_.pdf		The RJP05 is 2.4 GHz to 2.5 GHz; high efficiency Power stage for WLAN Power Amplifier. The Amplifier is designed using 0.18um SiGe BiCMOS process for 802.11 b/g WLAN systems. Power amplifier shows PAE of 31% at 24 dBm power with output match off-chip. It has been designed specially for WLAN application.
RJP05 _2.4GHz_WLAN_PA_.pdf
The RS01 is 1.7 to 2.7 GHz; high efficiency Single stage Low Noise Amplifier designed on 0.18μm SiGe BiCMOS technology. The device is designed for 802.11b/g standard and WLAN MIMO system. The simulated noise figure is as low as 1.2 dB at 2.0 GHz and 14 dBm Pout (P1 dB). Functional Diagram . The noise figure is 1.2 dB and it has small die area of 0.6 mm x 0.57 mm. The device works with single 1.8 V supply voltage and draws 11.6 mA of current. No external input or output matching components required.
RS01_1.7_2.7GHz_ single stage LNA_.pdf		The RS03 is 2 to 6 GHz; high efficiency Broadband Single Stage Low noise amplifier, designed on 0.35- μm SiGe BiCMOS technology. The device is designed for use in the 802.11a/b/g and WLAN MIMO system. Functional Diagram . The noise figure is 1.5 dB and it has an extremely small die area of 0.6mm x 0.57mm. The device works with single 3.3 V supply voltage and draws 11.8 mA of current.
RS03 _2_6GHz_Single stage_LNA_.pdf		The RTDA01 is a 2.0 to 5.0 GHz; CMOS driver amplifier. The device is designed for the 802.11 a/b/g WLAN systems. The driver amplifier gives 18 dBm Pout for the frequency range 2.0 to 5.0 GHz. The input and output matching is on chip which reduces the cost of the chip. The RTDA01 is biased with a single 3.3 V supply.
RTDA01.pdf		The RTLNA01 is 2 to 4 GHz; Low Noise Amplifier IP Block .The device is designed for 802.11 b/g and Cellular system. The LNA has input and output matching off-chip which will provide the flexibility to tune the LNA for low noise figure. The LNA is biased single 3.0 V supply and consumes only 7.5mA current. The simulated noise figure is as low as 1.5 dB at 2 GHz
RTLNA01.pdf
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