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Electronics > Components > Rficsolutions.Inc > ( there are 17 files in this category )

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..		The RDA03 is a 2.0 to 4.0 GHz, high gain Driver Amplifier. It provides very good gain flatness over the band. It requires +3.3 Volt supply. It has tunability by having some off chip components. It has the option to optimize externally with off chip interstage match. The die area of RDA03 is 1.0 mm X 0.5 mm
RDA03(2-4 GHz Driver Amp).pdf		The RFISFR01 is a RF front-end module that integrates band switching and is a transceiver front end designed for low voltage operation. The module contains wide band power amplifier, low noise amplifiers, band pass, low pass filters.
RFISFR01(2.5 -2.686 GHz).pdf		The RFISFRT01 is a monolithic integrated transceiver front end suitable for 802.11b/g (2.4 GHz) application. This is the fully integrated Transceiver Chip except passive filters. It contains low noise amplifier, Power amplifier and a switch. The input of the LNA is made available as an output to permit the insertion of a band pass filter between the LNA and the Rx out. The output of PA is also made available to insert a BPF in between PA and Transceiver chipset. A single supply voltage and a positive supply switch controls simplify bias requirements. The RFISFRT01 is targeted for high volume WLAN applications. Die Area of the RFISFTR01 is 1.5 mm x 2.5 mm.
RFISFRT01(2.4-2.5 GHz).pdf		The RGDA01 is 2.0 to 6.0 GHz GaAs Enhancement mode psuedomorphic high electron mobility transistor Driver Amplifier. The device is designed for IEEE 802.11a/b/g, WLAN standards and Cellular system. The driver amplifier can provide upto 20 dBm power output. The optimum performance of the chip can be achieved by some off chip matching. The part is biased with a single +3.3 V supply.
RGDA01(2-6 GHz GaAs pHEMT).pdf
The RGLNA01 is 0.7 to 3.0 GHz high efficiency GaAs Enhancement mode pHEMT Low Noise Amplifier IP Block .The device is designed for use in the IEEE 802.11b/g, PCS, PHS and Cellular system. The die area of RGLNA01 is 0.8 mm x 0.7 mm, with on chip input and output matching components. This makes it suitable for being packed in small QFN Packages. It requires a single +3.0 Volt supply and consumes only 15 mA current. There is good match between the measured and simulated results as shown below.
RGLNA01(0.7-3.0 GHz GaAs pHEMT).pdf		The RGLNA02 is 2.0 to 6.0 GHz high efficiency GaAs Enhancement mode psuedomorphic high electron mobility transistor Low noise amplifier. The device is designed for 802.11a/b/g and Wi-Fi systems. It gives Power Output of 5 dBm at P1 dB. The minimum noise figure achieved 1.8 dB at 2 GHz. A single 3V supply and 18 mA current bias the LNA. No input and output matching components are required.
RGLNA02(2-6 GHz, 3V GaAs pHEMT).pdf		The RGLNA03 is 2.0 to 12.0 GHz high efficiency GaAs Enhancement mode p-HEMT Low noise amplifier .The device is designed for 802.11a/b/g standard. The minimum noise figure achieved is 1.5 dB at 2 GHz. A single 3.5V and 12 mA current bias the LNA. No input and output matching components are required.
RGLNA03(2-12 GHz GaAs pHEMT).pdf		The RGLNA06 is a broadband high efficiency GaAs Enhancement mode pHEMT Low Noise Amplifier. The MMIC Low Noise Amplifier doesn’t require any off-chip component. The Broadband LNA is designed for the 802.11a/b/g/n system. The LNA covers a wide range of frequency from 2.0 to 6.0 GHz. The noise figure is 1.5 dB at 2.4 GHz, 1.7 dB at 3.5 GHz and 2.2 dB at 5.5 GHz. Currently the die size is 1mm x 1mm. A single 3.3 V and 14 mA current bias the LNA.
RGLNA06(2-6 GHz,3.3 V GaAs pHEMT).pdf		The RGLNA08 is 2.4 to 2.5 GHz high efficiency GaAs Enhancement mode psuedomorphic high electron mobility transistor Low noise amplifier. The device is designed for 802.11b/g and WLAN MIMO system. The noise figure is 1.5 dB at 2.4 GHz and die area is 1.5 mm x 1.0 mm. A single +3.3V and 12.4 mA current bias the LNA. No input and output matching components are required.
RGLNA08(2.4-2.5 GHz GaAs pHEMT).pdf
The RGLNA09 is 5.15 to 5.35 GHz high efficiency GaAs Enhancement mode psuedomorphic high electron mobility transistor Low noise amplifier .The device is designed for 802.11a and WLAN MIMO system. The noise figure is 1.4 dB at 5.25 GHz. The RGLNA09 is operating at 19.1 mA. No input and output matching components are required.
RGLNA09(5.15-5.35 GHz GaAs pHEMT ).pdf		The RGLNA10 is 7.0-26.0 GHz; Low Noise Distributed Amplifiers using GaAs pHEMT Technology. The self-biased amplifier provides 19 dB of gain and 14 dBm of output power at P1 dB gain compression while requiring only 86 mA from a single 3.0 V supply. Gain flatness is excellent from 7.0-26.0 GHz for RADAR and test equipment applications.
RGLNA10(7.0-26.0 GHz GaAs pHEMT).pdf		The RGLNA11 is a broadband high efficiency GaAs Enhancement mode pHEMT Low Noise Amplifier. The device is designed for use in the 802.11a/b/g and WLAN MIMO system. The LNA covers a wide range of frequency from 2 to 6 GHz. The noise figure is 1.7 dB at 2.3 GHz, 1.5 dB at 3.5 GHz and 1.5 dB at 5.5 GHz. Currently the die size is 0.875 mm x 1mm. A single 3.3V and 37 mA current bias the LNA. No input and output matching components are required.
RGLNA11(2-6 GHz GaAs pHEMT).pdf		The RGPA01 is a 2.4 to 2.5 GHz high efficiency GaAs Enhancement Mode pHEMT MMIC power amplifier. This MMIC power amplifier doesn’t require any off chip components. The device is designed for 802.11b/g and WLAN MIMO system. The Power Amplifier exhibits unparalleled linearity and efficiency for both 802.11g and 802.11b WLAN systems.
RGPA01(2.4-2.5 GHz GaAs pHEMT).pdf		The RGPA03 is a 3.4 to 3.6 GHz high efficiency GaAs Enhancement mode psuedomorphic high electron mobility transistor MMIC Power Amplifier. It has been designed for use in the 3.5 GHz WiMax systems. The part is matched at the input and output so no additional RF matching components are required. The PA exhibits unparalleled linearity and efficiency for this Band. The part is biased by a single +3.3V supply.
RGPA03(3.4-3.6 GHz GaAs pHEMT).pdf
The RGPA04 is a 4.9 to 5.9 GHz high efficiency GaAs Enhancement mode psuedomorphic high electron mobility transistor MMIC power amplifier. The device is designed for 802.11a WLAN system. The part is matched at the input and output so no additional RF matching components are required. The PA exhibits unparalleled linearity and efficiency of 37 % for 802.11a WLAN systems. The part is biased by a single +3.3 V supply.
RGPA04(4.9-5.9 GHz GaAs pHEMT).pdf		The RGPA05 is a 1.85 to 1.91 GHz high efficiency GaAs Enhancement mode psuedomorphic high electron mobility transistor MMIC power stage. This power stage can be preceded by a Driver stage to realize a complete amplifier. It has been designed specially for use in PCS band. The part is matched at the input and output so no additional RF matching components are required. The power stage exhibits unparalleled linearity and efficiency for this Band. The part is biased by a single 3.3 V Supply
RGPA05(1.85-1.91 GHz GaAs pHEMT ).pdf		The RTV01 is a CATV Line Amplifier IP block. CATV Line Amplifier designed using GaAs Enhancement mode psuedomorphic high electron mobility transistor (pHEMT). The amplifier provides low distortion and noise figure along with flat gain. The part is biased at 8V. This covers the range for 40 to 870 MHz band. The optimized on-chip impedance matching circuitry provides 50 ohm nominal RF input impedance and is provided in a low-cost industrystandard 14 Pin SOIC Package.
RTV01(CATV).pdf
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