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File | Date | Descr | Size | Popular | Mfg | Model |
11636-90001 Operating Note for the 11636B Power Divider DC to 26.5 GHz %28Feb85%29 c20140801 %5B200%5D : Full Text Matches - Check >> | ||||||
11636-90001 Operating Note for the 11636B Power Divider DC to 26.5 GHz %28Feb85%29 c20140801 %5B200%5D : Forum Matches - Check >> | ||||||
Found in: fulltext index (100) | ||||||
11636-90001 Operating Note for the 11636B Power Divider DC to 26.5 GHz (Feb85) c20140801 [200].pdf | 14/12/21 | Agilent 11636-90001 Operating Note for the 11636B Power Divider DC to 26.5 GHz (Feb85) c20140801 [200].pdf | 287 kB | 3 | Agilent | 11636-90001 Operating Note for the 11636B Power Divider DC to 26.5 GHz (Feb85) c20140801 [200] |
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11636-90004 11636A 50 Ohm Type-N Power Divider Operating and Service Manual c20140801 [200].pdf | 11/12/21 | Agilent 11636-90004 11636A 50 Ohm Type-N Power Divider Operating and Service Manual c20140801 [200].pdf | 314 kB | 3 | Agilent | 11636-90004 11636A 50 Ohm Type-N Power Divider Operating and Service Manual c20140801 [200] |
HP 11636B Operating Note.pdf | 12/11/20 | Agilent HP 11636B Operating Note.pdf | 559 kB | 2 | Agilent | HP 11636B Operating Note |
GEDA01.pdf | 11/02/08 | The GEDA01 is 7.0 GHz to 20.0 GHz low power single stage buffer amplifier. The amplifier is designed using 2 μm InGaP HBT Technology for high frequency applications. Driver amplifier shows gain of 4.5 dB at 20 GHz with power output of 9 dBm. It | 48 kB | 517 | Rficsolutions Inc. | The GEDA01 is 7.0 GHz to 20.0 GHz low power |
GEDA02.pdf | 11/02/08 | The GEDA02 is 20 GHz to 40 GHz low power buffer amplifier. The amplifier is designed using 2 μm InGaP HBT process for high frequency applications. Driver amplifier shows gain of 1dB at 40 GHz with power output of 0dBm. It operates at 4.2Volts. | 44 kB | 276 | Rficsolutions Inc. | The GEDA02 is 20 GHz to 40 GHz low power buffer |
GRFM1.pdf | 11/02/08 | The GRFM1 is 10 GHz to 20 GHz Frequency multiplier designed on 2 um InGaP HBT process. GRFM1 multiplies the input frequency from 10 GHz to 20 GHz by the factor of 2 so as to produce the output of 20 GHz to 40 GHz. Conversion gain of frequency multipl | 41 kB | 133 | Rficsolutions Inc. | GRFM1 |
5990-9882EN E4982A LCR Meter 1 MHz to 3 GHz - Data Sheet c20140801 [22].pdf | 26/08/20 | Agilent 5990-9882EN E4982A LCR Meter 1 MHz to 3 GHz - Data Sheet c20140801 [22].pdf | 3903 kB | 3 | Agilent | 5990-9882EN E4982A LCR Meter 1 MHz to 3 GHz - Data Sheet c20140801 [22] |
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RJP05 _2.4GHz_WLAN_PA_.pdf | 12/02/08 | The RJP05 is 2.4 GHz to 2.5 GHz; high efficiency Power stage for WLAN Power Amplifier. The Amplifier is designed using 0.18um SiGe BiCMOS process for 802.11 b/g WLAN systems. Power amplifier shows PAE of 31% at 24 dBm power with output match off-chip | 206 kB | 485 | Rficsolutions Inc. | RJP05 |
N8983-90001 Installation Note_252C Windows 7 Operating System Upgrade Kit for PNA Family Network Ana | 02/11/21 | Agilent N8983-90001 Installation Note_252C Windows 7 Operating System Upgrade Kit for PNA Family Network Analyzers c20140227 [12].pdf | 133 kB | 1 | Agilent | N8983-90001 Installation Note 252C Windows 7 Operating System Upgrade Kit for PNA Family Network Ana |
www.thinksrs.com-LDC Note 6 Modulation Input Divider.pdf | 30/01/20 | Stanford Research Systems www.thinksrs.com-LDC Note 6 Modulation Input Divider.pdf | 102 kB | 0 | Stanford Research Systems | www.thinksrs.com-LDC Note 6 Modulation Input Divider |
RGLNA09(5.15-5.35 GHz GaAs pHEMT ).pdf | 13/02/08 | The RGLNA09 is 5.15 to 5.35 GHz high efficiency GaAs Enhancement mode psuedomorphic high electron mobility transistor Low noise amplifier .The device is designed for 802.11a and WLAN MIMO system. The noise figure is 1.4 dB at 5.25 GHz. The RGLNA09 i | 36 kB | 61 | Rficsolutions.Inc | RGLNA09 |
GRDA1.pdf | 11/02/08 | The GRDA1 is 10 GHz to 20 GHz differential amplifier designed on 2 um InGaP HBT process. The gain of GRDA1 is 5 dB typically with flatness of ±3dB over the entire bandwidth. Typical current requirement for GRDA1 is 24 mA. The one dB compression point | 46 kB | 75 | Rficsolutions Inc. | GRDA1 |
RGPA05(1.85-1.91 GHz GaAs pHEMT ).pdf | 13/02/08 | The RGPA05 is a 1.85 to 1.91 GHz high efficiency GaAs Enhancement mode psuedomorphic high electron mobility transistor MMIC power stage. This power stage can be preceded by a Driver stage to realize a complete amplifier. It has been designed speciall | 118 kB | 126 | Rficsolutions.Inc | RGPA05 |
RGLNA10(7.0-26.0 GHz GaAs pHEMT).pdf | 13/02/08 | The RGLNA10 is 7.0-26.0 GHz; Low Noise Distributed Amplifiers using GaAs pHEMT Technology. The self-biased amplifier provides 19 dB of gain and 14 dBm of output power at P1 dB gain compression while requiring only 86 mA from a single 3.0 V supply. G | 44 kB | 198 | Rficsolutions.Inc | RGLNA10 |
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RGPA01(2.4-2.5 GHz GaAs pHEMT).pdf | 13/02/08 | The RGPA01 is a 2.4 to 2.5 GHz high efficiency GaAs Enhancement Mode pHEMT MMIC power amplifier. This MMIC power amplifier doesn’t require any off chip components. The device is designed for 802.11b/g and WLAN MIMO system. The Power Amplifier exhibit | 69 kB | 137 | Rficsolutions.Inc | RGPA01 |
HP 35678A_252C B Operating Note.pdf | 27/10/20 | Agilent HP 35678A_252C B Operating Note.pdf | 98 kB | 4 | Agilent | HP 35678A 252C B Operating Note |
HP 909A_252C D Operating Note.pdf | 30/11/19 | Agilent HP 909A_252C D Operating Note.pdf | 81 kB | 3 | Agilent | HP 909A 252C D Operating Note |
RGLNA02(2-6 GHz, 3V GaAs pHEMT).pdf | 13/02/08 | The RGLNA02 is 2.0 to 6.0 GHz high efficiency GaAs Enhancement mode psuedomorphic high electron mobility transistor Low noise amplifier. The device is designed for 802.11a/b/g and Wi-Fi systems. It gives Power Output of 5 dBm at P1 dB. The minimum no | 59 kB | 65 | Rficsolutions.Inc | RGLNA02 |
RJP04__3.4_3.6GHz_SiGe BiCMOS_PA_.pdf | 12/02/08 | The RJPA04 is 3.4 to 3.6 GHz; high efficiency SiGe BiCMOS power amplifier. The device is designed to provide high efficiency with good power output for WiMax applications. The device consumes 310 mA and it gives the power output of 28 dBm at P1 dB co | 173 kB | 139 | Rficsolutions Inc. | RJPA04 |
5991-2524EN Optimizing On-Wafer Noise Figure Measurements up to 67 GHz - Application Note c20140917 | 01/07/21 | Agilent 5991-2524EN Optimizing On-Wafer Noise Figure Measurements up to 67 GHz - Application Note c20140917 [20].pdf | 2563 kB | 1 | Agilent | 5991-2524EN Optimizing On-Wafer Noise Figure Measurements up to 67 GHz - Application Note c20140917 |