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Search results for: 11636-90001 Operating Note for the 11636B Power Divider DC to 26.5 GHz %28Feb85%29 c20140801 %5B200%5D (found: 100 regularSearch) ask for a document
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11636-90001 Operating Note for the 11636B Power Divider DC to 26.5 GHz %28Feb85%29 c20140801 %5B200%5D : Full Text Matches - Check >>
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11636-90001 Operating Note for the 11636B Power Divider DC to 26.5 GHz (Feb85) c20140801 [200].pdf14/12/21 Agilent 11636-90001 Operating Note for the 11636B Power Divider DC to 26.5 GHz (Feb85) c20140801 [200].pdf287 kB3Agilent11636-90001 Operating Note for the 11636B Power Divider DC to 26.5 GHz (Feb85) c20140801 [200]
11636-90004 11636A 50 Ohm Type-N Power Divider Operating and Service Manual c20140801 [200].pdf11/12/21 Agilent 11636-90004 11636A 50 Ohm Type-N Power Divider Operating and Service Manual c20140801 [200].pdf314 kB3Agilent11636-90004 11636A 50 Ohm Type-N Power Divider Operating and Service Manual c20140801 [200]
HP 11636B Operating Note.pdf12/11/20 Agilent HP 11636B Operating Note.pdf559 kB2AgilentHP 11636B Operating Note
GEDA01.pdf11/02/08The GEDA01 is 7.0 GHz to 20.0 GHz low power single stage buffer amplifier. The amplifier is designed using 2 μm InGaP HBT Technology for high frequency applications. Driver amplifier shows gain of 4.5 dB at 20 GHz with power output of 9 dBm. It 48 kB517Rficsolutions Inc.The GEDA01 is 7.0 GHz to 20.0 GHz low power
GEDA02.pdf11/02/08The GEDA02 is 20 GHz to 40 GHz low power buffer amplifier. The amplifier is designed using 2 μm InGaP HBT process for high frequency applications. Driver amplifier shows gain of 1dB at 40 GHz with power output of 0dBm. It operates at 4.2Volts.44 kB276Rficsolutions Inc.The GEDA02 is 20 GHz to 40 GHz low power buffer
GRFM1.pdf11/02/08The GRFM1 is 10 GHz to 20 GHz Frequency multiplier designed on 2 um InGaP HBT process. GRFM1 multiplies the input frequency from 10 GHz to 20 GHz by the factor of 2 so as to produce the output of 20 GHz to 40 GHz. Conversion gain of frequency multipl41 kB133Rficsolutions Inc.GRFM1
5990-9882EN E4982A LCR Meter 1 MHz to 3 GHz - Data Sheet c20140801 [22].pdf26/08/20 Agilent 5990-9882EN E4982A LCR Meter 1 MHz to 3 GHz - Data Sheet c20140801 [22].pdf3903 kB3Agilent5990-9882EN E4982A LCR Meter 1 MHz to 3 GHz - Data Sheet c20140801 [22]
RJP05 _2.4GHz_WLAN_PA_.pdf12/02/08The RJP05 is 2.4 GHz to 2.5 GHz; high efficiency Power stage for WLAN Power Amplifier. The Amplifier is designed using 0.18um SiGe BiCMOS process for 802.11 b/g WLAN systems. Power amplifier shows PAE of 31% at 24 dBm power with output match off-chip206 kB485Rficsolutions Inc.RJP05
N8983-90001 Installation Note_252C Windows 7 Operating System Upgrade Kit for PNA Family Network Ana02/11/21 Agilent N8983-90001 Installation Note_252C Windows 7 Operating System Upgrade Kit for PNA Family Network Analyzers c20140227 [12].pdf133 kB1AgilentN8983-90001 Installation Note 252C Windows 7 Operating System Upgrade Kit for PNA Family Network Ana
www.thinksrs.com-LDC Note 6 Modulation Input Divider.pdf30/01/20 Stanford Research Systems www.thinksrs.com-LDC Note 6 Modulation Input Divider.pdf102 kB0Stanford Research Systemswww.thinksrs.com-LDC Note 6 Modulation Input Divider
RGLNA09(5.15-5.35 GHz GaAs pHEMT ).pdf13/02/08The RGLNA09 is 5.15 to 5.35 GHz high efficiency GaAs Enhancement mode psuedomorphic high electron mobility transistor Low noise amplifier .The device is designed for 802.11a and WLAN MIMO system. The noise figure is 1.4 dB at 5.25 GHz. The RGLNA09 i36 kB61Rficsolutions.IncRGLNA09
GRDA1.pdf11/02/08The GRDA1 is 10 GHz to 20 GHz differential amplifier designed on 2 um InGaP HBT process. The gain of GRDA1 is 5 dB typically with flatness of ±3dB over the entire bandwidth. Typical current requirement for GRDA1 is 24 mA. The one dB compression point46 kB75Rficsolutions Inc.GRDA1
RGPA05(1.85-1.91 GHz GaAs pHEMT ).pdf13/02/08The RGPA05 is a 1.85 to 1.91 GHz high efficiency GaAs Enhancement mode psuedomorphic high electron mobility transistor MMIC power stage. This power stage can be preceded by a Driver stage to realize a complete amplifier. It has been designed speciall118 kB126Rficsolutions.IncRGPA05
RGLNA10(7.0-26.0 GHz GaAs pHEMT).pdf13/02/08The RGLNA10 is 7.0-26.0 GHz; Low Noise Distributed Amplifiers using GaAs pHEMT Technology. The self-biased amplifier provides 19 dB of gain and 14 dBm of output power at P1 dB gain compression while requiring only 86 mA from a single 3.0 V supply. G44 kB198Rficsolutions.IncRGLNA10
RGPA01(2.4-2.5 GHz GaAs pHEMT).pdf13/02/08The RGPA01 is a 2.4 to 2.5 GHz high efficiency GaAs Enhancement Mode pHEMT MMIC power amplifier. This MMIC power amplifier doesn’t require any off chip components. The device is designed for 802.11b/g and WLAN MIMO system. The Power Amplifier exhibit69 kB137Rficsolutions.IncRGPA01
HP 35678A_252C B Operating Note.pdf27/10/20 Agilent HP 35678A_252C B Operating Note.pdf98 kB4AgilentHP 35678A 252C B Operating Note
HP 909A_252C D Operating Note.pdf30/11/19 Agilent HP 909A_252C D Operating Note.pdf81 kB3AgilentHP 909A 252C D Operating Note
RGLNA02(2-6 GHz, 3V GaAs pHEMT).pdf13/02/08The RGLNA02 is 2.0 to 6.0 GHz high efficiency GaAs Enhancement mode psuedomorphic high electron mobility transistor Low noise amplifier. The device is designed for 802.11a/b/g and Wi-Fi systems. It gives Power Output of 5 dBm at P1 dB. The minimum no59 kB65Rficsolutions.IncRGLNA02
RJP04__3.4_3.6GHz_SiGe BiCMOS_PA_.pdf12/02/08The RJPA04 is 3.4 to 3.6 GHz; high efficiency SiGe BiCMOS power amplifier. The device is designed to provide high efficiency with good power output for WiMax applications. The device consumes 310 mA and it gives the power output of 28 dBm at P1 dB co173 kB139Rficsolutions Inc.RJPA04
5991-2524EN Optimizing On-Wafer Noise Figure Measurements up to 67 GHz - Application Note c20140917 01/07/21 Agilent 5991-2524EN Optimizing On-Wafer Noise Figure Measurements up to 67 GHz - Application Note c20140917 [20].pdf2563 kB1Agilent5991-2524EN Optimizing On-Wafer Noise Figure Measurements up to 67 GHz - Application Note c20140917

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