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SEMICONDUCTOR KTX303U
EPITAXIAL PLANAR PNP TRANSISTOR
TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE
SWITCHING APPLICATION.
LOW VOLTAGE HIGH SPEED SWITCHING.
B
FEATURES B1
Including two(TR, Diode) devices in USV.
1 5 DIM MILLIMETERS
(Ultra Super Mini type with 5 leads) A _
2.00 + 0.20
C
A1
2 _
1.3 + 0.1
A
A1
Simplify circuit design.
C
B _
2.1 + 0.1
3 4 D _
Reduce a quantity of parts and manufacturing process. B1 1.25+ 0.1
C 0.65
D 0.2+0.10/-0.05
G 0-0.1
H _
0.9 + 0.1
T 0.15+0.1/-0.05
H
T
EQUIVALENT CIRCUIT (TOP VIEW)
G
5 4 Marking
5 4 1. D 1 ANODE
Lot No. 2. Q 1 BASE
3. Q 1 EMITTER
D1 Q1 4. Q 1 COLLECTOR
CI
Type Name 5. D 1 CATHODE
1 2 3
1 2 3 USV
MAXIMUM RATINGS (Ta=25 )
TRANSISTOR Q1
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO -15 V
Collector-Emitter Voltage VCEO -12 V
Emitter-Base Voltage VEBO -6
IC -500
Collector Current
ICP * -1 A
Collector Power Dissipation PC 100
Junction Temperature Tj 150
Storage Temperature Range Tstg -55~125
DIODE (SBD) D1
CHARACTERISTIC SYMBOL RATING UNIT
Maximum (Peak) Reverse Voltage VRM 30 V
Reverse Voltage VR 30 V
Maximum (Peak) Forward Current IFM 300
Average Forward Current IO 200
Surge Current (10mS) IFSM 1 A
Junction Temperature Tj 125
Storage Temperature Range Tstg -55 125
2008. 8. 29 Revision No : 2 1/4
KTX303U
ELECTRICAL CHARACTERISTICS (Ta=25 )
TRANSISTOR Q1
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-15V, IE=0 - - -100
Collector-Base Breakdown Voltage V(BR)CBO IE=-10 -15 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC=-1 -12 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=-10 -6 - - V
DC Current Gain hFE VCE=-2V, IC=-10 270 - 680 -
Collector-Emitter Saturation Voltage VCE(SAT) IC=-200 , IB=-10 - -100 -250
Transition Frequency fT VCE=-2V, IC=-10 , f=100 - 260 -
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1 - 6.5 -
DIODE (SBD) D1
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
VF(1) IF=1mA - 0.22 -
VF(2) IF=10mA - 0.29 -
Forward Voltage V
VF(3) IF=100mA - 0.38 -
VF(4) IF=200mA - 0.43 0.55
Reverse Current IR VR=30V - - 50
Total Capacitance CT VR=0, f=1 - 50 -
2008. 8.29 Revision No : 2 2/4
KTX303U
Q1 (PNP TRANSISTOR)
hFE - IC VCE(sat) - IC
COLLECTOR-EMITTER SATURATION
1K -1K
I C /IB =20
Ta=125 C -500
500
DC CURRENT GAIN hFE
VOLTAGE VCE(sat) (mV)
Ta=25 C -300
300
Ta=-40 C
-100
C
-50 125
Ta=
100 -30
25 C C
Ta= =-40
Ta
50 -10
30 -5
-3
VCE =-2V
10 -1
-1 -3 -10 -30 -100 -300 -1K -1 -3 -10 -30 -100 -300 -1K
COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA)
VCE(sat) - IC VBE(sat) - IC
COLLECTOR-EMITTER SATURATION
-1K -10K
BASE-EMITTER SATURATION
Ta=25 C I C /IB =20
-500
-5K
VOLTAGE VBE(sat) (mV)
VOLTAGE VCE(sat) (mV)
-300
-3K
-100
-50 I C /IB =50
-30 -1K Ta=-40 C
I C /IB =20
I C /IB =10
-10 -500 Ta=25 C C
Ta=125
-5 -300
-3
-1 -100
-1 -3 -10 -30 -100 -300 -1K -1 -3 -10 -30 -100 -300 -1K
COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA)
IC - VBE fT - IC
TRANSITION FREQUENCY fT (MHz)
-1K 1K
COLLECTOR CURRENT IC (mA)
VCE =-2V VCE =-2V
-500 Ta=25 C
-300 500
300
-100
-50
5 C
C
40 C
-30 100
2
5
Ta=1
Ta=2
Ta=-
-10 50
-5 30
-3
-1 10
0 -0.5 -1.0 -1.5 -1 -3 -10 -30 -100 -300 -1K
BASE-EMITTER VOLTAGE VBE (V) COLLECTOR CURRENT IC (mA)
2008. 8.29 Revision No : 2 3/4
KTX303U
Cob - VCB , Cib - VEB
COLLECTOR OUTPUT CAPACITANCE Cob (PF)
COLLECTOR INPUT CAPACITANCE Cib (PF)
1K
I E =0A
500 f=1MHz
Ta=25 C
300
100
50
30
C ib
10
5 C ob
3
1
-0.1 -0.3 -1 -3 -10 -30 -100
COLLECTOR-BASE VOLTAGE VCB (V)
EMITTER-BASE VOLTAGE VEB (V)
D1 (SBD)
IF - VF IR - VR
10
FORWARD CURRENT IF (mA)
Ta=25 C Ta=25 C
REVERSE CURRENT IR (