Text preview for : 2sb1261.pdf part of . Electronic Components Datasheets 2sb1261 . Electronic Components Datasheets Active components Transistors LGE 2sb1261.pdf
Back to : 2sb1261.pdf | Home
2SB1261
Transistor(PNP)
TO-252-2L
1. BASE
1 2. COLLECTOR
3. EMITTER
Features
High hFE hFE=100 to 400
Low vCE(sat) vCE(sat) 0.3V
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -60 V
VCEO Collector-Emitter Voltage -60 V
VEBO Emitter-Base Voltage -7 V
IC Collector Current -Continuous -3 A
PD Collector Power Dissipation 2 W
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-100