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BC847
SMALL SIGNAL NPN TRANSISTORS
Type Marking
BC847B 1F
s SILICON EPITAXIAL PLANAR NPN
TRANSISTORS
s MINIATURE PLASTIC PACKAGE FOR
APPLICATION IN SURFACE MOUNTING
2
CIRCUITS
s LOW LEVEL GENERAL PURPOSE 3
s PNP COMPLEMENT IS BC857 1
SOT-23
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Uni t
V CES Collector-Emitter Voltage (V BE = 0) 50 V
V CBO Collector-Base Voltage (IE = 0) 50 V
V CEO Collector-Emitter Voltage (I B = 0) 45 V
V EBO Emitter-Base Voltage (I C = 0) 6 V
IC Collector Current 0.1 A
I CM Collector Peak Current 0.2 A
I BM Base Peak Current 0.2 A
I EM Emitter Peak Current 0.2 A
o
P t ot Total Dissipation at T c = 25 C 300 mW
o
T stg Storage Temperature -65 to 150 C
o
Tj Max. O perating Junction Temperature 150 C
October 1997 1/4
BC847
THERMAL DATA
o
R t hj-amb