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MMBTA42
TRANSISTOR(NPN)
FEATURES
High breakdown voltage SOT-23
Low collector-emitter saturation voltage
Complementary to MMBTA92 (PNP) 1. BASE
2. EMITTER
3. COLLECTOR
Marking: 1D
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 300 V
VCEO Collector-Emitter Voltage 300 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 0.3 A
PC Collector Power dissipation 0.35 W
RJA Thermal Resistance, junction to Ambient 357 /mW
TJ Junction Temperature 150
Tstg Storage Temperature -55to +150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC= 100A, IE=0 300 V
Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, IB=0 300 V
Emitter-base breakdown voltage V(BR)EBO IE= 100A, IC=0 5 V
Collector cut-off current ICBO VCB=200V, IE=0 0.25 A
Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 A
hFE(1) VCE= 10V, IC= 1mA 60
DC current gain hFE(2) VCE= 10V, IC=10mA 100 200
hFE(3) VCE=10V, IC=30mA 60
Collector-emitter saturation voltage VCE(sat) IC=20mA, IB= 2mA 0.2 V
Base-emitter saturation voltage VBE(sat) IC= 20mA, IB=2mA 0.9 V
VCE= 20V, IC= 10mA,
Transition frequency fT 50 MHz
f=30MHz
1
JinYu www.htsemi.com
semiconductor
Date:2011/05
MMBTA42
2
JinYu www.htsemi.com
semiconductor
Date:2011/05
MMBTA42
3
JinYu www.htsemi.com
semiconductor
Date:2011/05