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STP3NB90
STP3NB90FP
N-CHANNEL 900V - 4 - 3.5 A TO-220/TO-220FP
PowerMeshTM MOSFET
TYPE VDSS RDS(on) ID Pw
STP3NB90 900 V < 4.2 3.5 A 110 W
STP3NB90FP 900 V < 4.2 3.5 A 35 W
s TYPICAL RDS(on) = 4
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED 3 2
3
2 1
s GATE CHARGE MINIMIZED 1
s VERY LOW INTRINSIC CAPACITANCES TO-220FP
TO-220
DESCRIPTION
Using the latest high voltage MESH OVERLAYTM
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company's proprieraty edge termi-
nation structure, gives the lowest RDS(on) per area, INTERNAL SCHEMATIC DIAGRAM
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ORDERING INFORMATION
SALES TYPE MARKING PACKAGE PACKAGING
STP3NB90 P3NB90 TO-220 TUBE
STP3NB90FP P3NB90FP TO-220FP TUBE
October 2002 1/10
STP3NB90 - STP3NB90FP
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP3NB90 STP3NB90FP
VDS Drain-source Voltage (VGS = 0) 900 V
VDGR Drain-gate Voltage (RGS = 20 k) 900 V
VGS Gate- source Voltage