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Philips Semiconductors Product specification

Silicon Diffused Power Transistor BUT11XI

GENERAL DESCRIPTION
High-voltage, high-speed glass-passivated npn power transistor in a plastic full-pack envelope intended for use in
electronic HF/OH lighting ballast applications, converters, inverters, switching regulators, motor control systems,
etc.

QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VCESM Collector-emitter voltage peak value VBE = 0 V - 1000 V
VCEO Collector-emitter voltage (open base) - 450 V
IC Collector current (DC) - 5 A
ICM Collector current peak value - 10 A
Ptot Total power dissipation Ths 25