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SEMICONDUCTOR BD139
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION. A
B D
FEATURES C
E
High Current. (Max. : 1.5A)
F
DC Current Gain : hFE=40Min. @IC=0.15A
Complementary to BD140. G
H
DIM MILLIMETERS
J
A 8.3 MAX
K L B 5.8
C 0.7
D _
3.2 + 0.1
MAXIMUM RATING (Ta=25 ) E 3.5
F _
11.0 + 0.3
CHARACTERISTIC SYMBOL RATING UNIT G 2.9 MAX
M
H 1.0 MAX
Collector-Base Voltage VCBO 100 V J 1.9 MAX
O K _
0.75 + 0.15
N P
_
15.5 + 0.5
Collector-Emitter Voltage VCEO 80 V 1 2 3 L
M _
2.3 + 0.1
N _
0.65 + 0.15
Emitter-Base Voltage VEBO 5 V
1. EMITTER O 1.6
2. COLLECTOR P 3.4 MAX
Collector Current IC 1.5 A
3. BASE
Base Current IB 0.5 A
Collector Power Ta=25 1.25 TO-126
PC W
Dissipation Tc=25 10
Junction Temperature Tj 150
Storage Temperature Range Tstg -55150
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=30V, IE=0 - - 0.1 A
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 10 A
Collector-Emitter Breakdown Voltage V(BR)CEO IC=30mA, IB=0 80 - - V
hFE (1) IC=5mA, VCE=2V 25 - -
DC Current Gain hFE (2) IC=150mA, VCE=2V 40 - 250
hFE (3) IC=500mA, VCE=2V 25 - -
Collector-Emitter Saturation Voltage VCE(sat) IC=500mA, IB=50mA - - 0.5 V
Base-Emitter Voltage VBE VCE=2V, IC=50mA - - 1.0 V
2008. 10. 10 Revision No : 1 1/2
BD139
h FE - I C VCE(sat) - IC
SATURATION VOLTAGE VCE(sat) (mV)
100 500
VCE=2V
90 450
DC CURRENT GAIN h FE
80 400
IC/IB=20
70 350
60 300
IC/IB=10
50 250
40 200
30 150
20 100
10 50
0 0
10 100 1000 0.001 0.01 0.1 1 10
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (A)
VCE(sat) - IC SAFE OPERATING AREA
BASE-EMITTER VOLTAGE VCE(sat) (V)
1.1 10
COLLECOTR CURRENT IC (A)
1.0 IC MAX. (Pulsed)
VBE(sat)
0.9 IC/IB=10 IC MAX. (Continuous)
0.8 1ms 100