Text preview for : 2n6274_2n6277.pdf part of . Electronic Components Datasheets 2n6274 2n6277 . Electronic Components Datasheets Active components Transistors Microsemi 2n6274_2n6277.pdf



Back to : 2n6274_2n6277.pdf | Home

TECHNICAL DATA

PNP POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/514

Devices Qualified Level
JAN
2N6274 2N6277 JANTX
JANTXV




MAXIMUM RATINGS
Ratings Symbol 2N6274 2N6277 Unit
Collector-Emitter Voltage VCEO 100 150 Vdc
Collector-Base Voltage VCBO 120 180 Vdc
Emitter-Base Voltage VEBO 6.0 Vdc
Base Current IB 20 Adc
Collector Current IC 50 Adc
Total Power Dissipation @ TC = +250C (1) PT 250 W
@ TC = +1000C (2) 143 W
0
Operating & Storage Junction Temperature Range Tj, Tstg -65 to +200 C
THERMAL CHARACTERISTICS TO-3*
Characteristics Symbol Max. Unit
0 (TO-204AA)
Thermal Resistance, Junction-to-Case RJC 0.7 C/W
1) Derate linearly 1.43 W/0C between TC = +250C and TC = +2000C
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 50 mAdc 2N6274 V(BR)CEO 100 Vdc
2N6277 150
Collector-Emitter Cutoff Current
VCE = 50 Vdc 2N6274 ICEO 50