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STE53NC50
N-CHANNEL 500V - 0.070 - 53A ISOTOP
PowerMeshTMII MOSFET

TYPE VDSS RDS(on) ID

STE53NC50 500V < 0.08 53 A
n TYPICAL RDS(on) = 0.07
n EXTREMELY HIGH dv/dt CAPABILITY
n 100% AVALANCHE TESTED
n NEW HIGH VOLTAGE BENCHMARK
n GATE CHARGE MINIMIZED

ISOTOP
DESCRIPTION
The PowerMESHTMII is the evolution of the first
generation of MESH OVERLAYTM. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate INTERNAL SCHEMATIC DIAGRAM
charge and ruggedness.

APPLICATIONS
n HIGH CURRENT, HIGH SPEED SWITCHING
n SWITH MODE POWER SUPPLIES (SMPS)
n DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER

ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 500 V
VDGR Drain-gate Voltage (RGS = 20 k) 500 V
VGS Gate- source Voltage