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W4413DW
Dual Epitaxial Planer Transistor 3 2 1
6 5
NPN+PNP Silicon 4
1
2
3
4 5 6
Features: NPN+PNP SOT-363(SC-88)
* Epitaxial Planar Die Construction
* Ldeal For Low Power Amplification and Switching
Maximum Ratings
Parameter Symbol Value Unit
NPN 40
Collector-Emitter Voltage VCEO Vdc
PNP -40
NPN 60
Collector-Base Voltage VCBO Vdc
PNP -40
NPN 6.0
Emitter-Base VOltage VEBO Vdc
PNP -5.0
NPN
lC 600
Collector Current-Continuous PNP -600 mAdc
Thermal Characteristics
Characteristics Symbol Max Unit
Total Device Dissipation FR-5 Board, (1)
PD 200 mW
TA=25
Thermal Resistance from Junction to Ambient RJA 625 / W
Junction Temperature TJ 150
Storage Temperature Tstg -55 to +150
Device Marking
W4413DW = K13
WEITRON 1/4 07-Jun-2012
http://www.weitron.com.tw
W4413DW
NPN Electrical Characteristics (TA=25 C unless otherwise noted)
Characteristics Symbol Min Typ Max Unit
Off Characteristics
Collector-Emitter Breakdown Voltage
(lC = 1.0mA)
V(BR)CEO 40 - - V
Collector-Base Breakdown Voltage
(lC = 100