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SEMICONDUCTOR KMB7D6NP30Q
TECHNICAL DATA N and P-Ch Trench MOSFET
General Description
Switching regulator and DC-DC Converter applications.
It s mainly suitable for power management in PC,
H
portable equipment and battery powered systems. T
D P G L
FEATURES
N-Channel A
: VDSS=30V, ID=7.6A. DIM MILLIMETERS
A 5.05+0.25/-0.20
: RDS(ON)=20m (Max.) @ VGS=10V B1 _
3.90 + 0.3
: RDS(ON)=40m (Max.) @ VGS=4.5V 8 5 B2 _
6.00 + 0.4
D _
0.42 + 0.1
P-Channel G _
0.15 + 0.1
B1 B2
: VDSS=-30V, ID=-5.3A. H _
1.4 + 0.2
1 4 L _
0.5 + 0.2
: RDS(ON)=45m (Max.) @ VGS=-10V P 1.27 Typ.
: RDS(ON)=60m (Max.) @ VGS=-4.5V T _
0.20 + 0.05
Super High Dense Cell Design.
Reliable and rugged.
FLP-8 (1)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL N-Ch P-Ch UNIT
Drain-Source Voltage VDSS 30 -30 V
Gate-Source Voltage VGSS 20 20 V
DC ID * 7.6 -5.3
Drain Current A
Pulsed (note1)
IDP 30 -20
Source-Drain Diode Current IS 1.7 -1.7 A
Drain Power Dissipation PD * 2 W
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Thermal Resistance, Junction to Ambient RthJA 62.5 /W
* : Surface Mounted on FR4 Board, t 10sec.
D1 D1 S2
PIN CONNECTION (TOP VIEW)
S1 1 8 D1
G2
G1 2 7 D1 G1
S2 3 6 D2
G2 4 5 D2 S1 D2 D2
N-Channel MOSFET P-Channel MOSFET
2007. 3. 22 Revision No : 1 1/8
KMB7D6NP30Q
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
ID=250 A, VGS=0V, N-Ch 30 - -
Drain-Source Breakdown Voltage BVDSS V
ID=-250 A, VGS=0V, P-Ch -30 - -
VGS=0V, VDS=24V N-Ch - - 1
Drain Cut-off Current IDSS A
VGS=0V, VDS=-24V P-Ch - - -1
N-Ch - - 100
Gate Leakage Current IGSS VGS= 20V, VDS=0V nA
P-Ch - - 100
VDS=VGS, ID=250 A N-Ch 1.0 1.7 3
Gate Threshold Voltage Vth V
VDS=VGS, ID=-250 A P-Ch -1.0 -1.6 -3
VGS=10V, ID=7A (Note 1) N-Ch - 14 20
VGS=-10V, ID=-5A (Note 1) P-Ch - 35 45
Drain-Source ON Resistance RDS(ON) m
VGS=4.5V, ID=6A (Note 1) N-Ch - 24 40
VGS=-4.5V, ID=-4A (Note 1) P-Ch - 50 60
VGS=10V, VDS=10V (Note 1) N-Ch 20 - -
ON State Drain Current ID(ON) A
VGS=-10V, VDS=-5V (Note 1) P-Ch -20 - -
VDS=10V, ID=7A (Note 1) N-Ch - 10 -
Forward Transconductance gfs S
VDS=-5V, ID=-5A (Note 1) P-Ch - 9 -
Source-Drain Diode Forward IS=1.7A, VGS=0V (Note 1) N-Ch - 0.76 1.2
VSD V
Voltage IS=-1.7A, VGS=0V (Note 1) P-Ch - -0.74 -1.2
2007. 3. 22 Revision No : 1 2/8
KMB7D6NP30Q
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Dynamic (Note 2)
N-Ch
: VDS=15V, ID=7A, N-Ch - 20.1 -
VGS=10V (Fig.1)
P-Ch
: VDS=-15V, ID=-5A, P-Ch - 13.8 -
VGS=-10V (Fig.3)
Total Gate Charge Qg
N-Ch
: VDS=15V, ID=7A, N-Ch - 10.5 -
VGS=4.5V (Fig.1)
nC
P-Ch
: VDS=-15V, ID=-5A, P-Ch - 6.85 -
VGS=-4.5V (Fig.3)
N-Ch N-Ch - 2.64 -
Gate-Source Charge Qgs : VDS=15V, ID=7A,
VGS=10V (Fig.1) P-Ch - 1.52 -
P-Ch N-Ch - 6.08 -
Gate-Drain Charge Qgd : VDS=-15V, ID=-5A,
VGS=-10V (Fig.3) P-Ch - 3.65 -
N-Ch - 8.3 -
Turn-on Delay time td(on)
P-Ch - 5.6 -
N-Ch N-Ch - 27.5 -
Turn-on Rise time tr : VDD=15V, ID=1A,
VGS=10V, RG=6 (Fig.2) P-Ch - 20.5 -
P-Ch ns
N-Ch - 20.8 -
Turn-off Delay time td(off) : VDD=-15V, VGS=-10V,
RL=2.7 , RG=3 (Fig.4) P-Ch - 13.6 -
N-Ch - 8.3 -
Turn-off Fall time tf
P-Ch - 7.8 -
N-Ch - 1014 -
Input Capacitance Ciss
P-Ch - 714 -
N-Ch
: VDS=15V, VGS=0V, f=1.0MHz N-Ch - 213 -
Output Capacitance Coss pF
P-Ch P-Ch - 161 -
: VDS=-15V, VGS=0V, f=1.0MHz
N-Ch - 151 -
Reverse transfer Capacitance Crss
P-Ch - 102 -
Note 1) Pulse test : Pulse width 300 , Duty Cycle 2%.
Note 2) Guaranteed by design. Not subject to production testing.
2007. 3. 22 Revision No : 1 3/8
KMB7D6NP30Q
N-Channel
ID - VDS ID - VGS
20 25
VGS=10, 9, 7, 5, 4.5V
16 20
Drain Current ID (A)
Drain Current ID (A)
VGS=4V
12 15
8 10
VGS=3.5V
4 125 C
5
VGS=3V 25 C -55 C
0 0
0 1 2 3 4 5 6 0 0.8 1.6 2.4 3.2 4.0 4.8
Drain - Source Voltage VDS (V) Gate - Source Voltage VGS (V)
Vth - Tj IS - VSD
1.6 40
Normalized Threshold Voltage Vth
VDS = VGS
Reverse Drain Current IS (A)
IDS = 250