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2SC3552 Silicon Epitaxial Planar Transistor
GENERAL DESCRIPTION
Silicon NPN high frequency, high power transistors
in a plastic envelope, primarily for use in audio and
general purpose
MT-100
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP MAX UNIT
VCESM Collector-emitter voltage peak value VBE = 0V - 1100 V
VCEO Collector-emitter voltage (open base) - 500 V
IC Collector current (DC) - 12 A
ICM Collector current peak value - A
Ptot Total power dissipation Tmb 25 - 150 W
VCEsat Collector-emitter saturation voltage IC = 4.5A; IB = 1.0A - 3 V
VF Diode forward voltage IF = 4.5A 1.5 2.0 V
tf Fall time IC=4.5A,IB1=-IB2=0.8A,VCC=80V 0.3 1.0- s
LIMITING VALUES
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
VCESM Collector-emitter voltage peak value VBE = 0V - 1100 V
VCEO Collector-emitter voltage (open base) - 500 V
VEBO Emitter-base oltage (open colloctor) 5 V
IC Collector current (DC) - 12 A
IB Base current (DC) - 3 A
Ptot Total power dissipation Tmb 25 - 150 W
Tstg Storage temperature -55 150
Tj Junction temperature - 150
ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS TYP MAX UNIT
ICBO Collector-base cut-off current VCB=1000V - 0.2 mA
IEBO Emitter-base cut-off current VEB=5V - 0.2 mA
V(BR)CEO Collector-emitter breakdown voltage IC=1mA 500 V
VCEsat Collector-emitter saturation voltages IC = 4.5A; IB = 1A - 3.0 V
hFE DC current gain IC = 1.0A; VCE = 5V 10
fT Transition frequency at f = 5MHz IC = 1.0A; VCE = 12V 15 - MHz
Cc Collector capacitance at f = 1MHz VCB = 10V 280 - pF
ton On times IC=4.5A,IB1=-IB2=0.8A,VCC=80V us
ts Tum-off storage time IC=4.5A,IB1=-IB2=0.8A,VCC=80V us
tf Fall time IC=4.5A,IB1=-IB2=0.8A,VCC=80V 0.3 1.0 us
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