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A733LT1
General Purpose Transistor COLLECTOR
3
PNP Silicon 1
BASE
2
SOT-23
EMITTER
MAXIMUM RATINGS (Ta=25 C)
Rating Symbol Value Unit
Collector-Emitter Voltage VCEO -50 Vdc
Collector-Base Voltage VCBO -60 Vdc
Emitter-Base Voltage VEBO -5.0 Vdc
Collector Current -Continuous IC -150 mAdc
THERMAL CHARACTERISTICS
Characteristics Symbol Value Unit
Total Device Dissipation FR-5 Board (1) PD 200 mW
TA =25 C
Derate above 25 C 1.6 mW/ C
Thermal Resistance, Junction Ambient R JA 625 C/W
Junction and Storage, Temperature TJ, Tstg -55 to +150 C
Device Marking
A733=CS
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Min Max Unit
Collector-Emitter Breakdown Voltage (IC= -1 mAdc, IB=0) V(BR)CEO -50 - Vdc
Collector-Base Breakdown Voltage (IC= -5 uAdc, IE=0) V(BR)CBO -60 - Vdc
Emitter-Base Breakdown Voltage (IE= -50 uAdc, IC=0) V(BR)EBO -5.0 - Vdc
Collector Cutoff Current (VCB= -60Vdc, IE=0) ICBO - -0.1 uAdc
Emitter Cutoff Current (VEB= -5.0 Vdc, I C=0) IEBO - -0.1 uAdc
1. FR-5=1.0 I I 0.75 I I 0.062 in
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A733LT1
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
Characteristics Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain
hFE 120 - 475 -
(IC= -1 mAdc, VCE= -6 Vdc)
Collector-Emitter Saturation Voltage
VCE(sat) - -0.18 -0.3 Vdc
(IC= -100 mAdc, I B = -10mAdc)
Transition Frequency
(IC= -10mAdc, VCE=-6 Vdc, f=30MHz) fT 50 - - MHz
CLASSIFICATION OF hFE
Rank L H
Range 120-200 200-475
WEITRON
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A733LT1
FIG.1 Total Power Dissipation
vs. Ambisent Themperature FIG.2 Collector Current vs. FIG.3 Collector Current vs.
Collector to Emitter Voltage Collector to Emitter Voltage
FIG.4 DC Current Gain vs. FIG.5 DC Current vs.
Collector Current Collector Current
FIG.6 Collector and Base Saturation FIG.7 Gain Bandwidth Product
Voltage vs. Collector Current vs. Emitter Current
WEITRON
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A733LT1
SOT-23 Package Outline Dimensions Unit:mm
A Dim Min Max
A 0.35 0.51
B 1.19 1.40
TOP VIEW B C C 2.10 3.00
D 0.85 1.05
E 0.46 1.00
D
G 1.70 2.10
G
E H 2.70 3.10
H J 0.01 0.13
K 0.89 1.10
K L 0.30 0.61
M 0.076 0.25
L
J M
WEITRON
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