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2SB1 260
TRANSISTOR(PNP) SOT-89-3L
1. BASE
FEATURES
Power Transistor 2. COLLECTOR
High Voltage and Current
3. EMITTER
Low Collector-emitter saturation voltage
Complements the 2SD1898
MAXIMUM RATINGS (Ta=25 unless otherwise noted)
Symbol Parameter Value Unit
VCBO Collector-Base Voltage -80 V
VCEO Collector-Emitter Voltage -80 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -1 A
PC Collector Power Dissipation 500 mW
RJA Thermal Resistance From Junction To Ambient 250 /W
Tj Junction Temperature 150
Tstg Storage Temperature -55~+150
ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)
Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC=-50