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STS9NF30L
N-CHANNEL 30V - 0.015 - 9A SO-8
LOW GATE CHARGE STripFETTM II POWER MOSFET

TYPE VDSS RDS(on) ID

STS9NF30L 30 V <0.020 9A
s TYPICAL RDS(on) = 0.020 @ 5 V
s TYPICAL Qg = 9.5 nC @ 4.5 V
s OPTIMAL RDS(on) x Qg TRADE-OFF
s CONDUCTION LOSSES REDUCED
s SWITCHING LOSSES REDUCED

DESCRIPTION
This application specific Power MOSFET is the second SO-8
generation of STMicroelectronis unique "Single Feature
SizeTM" strip-based process. The resulting transistor
shows the best trade-off between on-resistance and gate
charge. When used as high and low side in buck
regulators, it gives the best performance in terms of both
conduction and switching losses. This is extremely
important for motherboards where fast switching and INTERNAL SCHEMATIC DIAGRAM
high efficiency are of paramount importance.

APPLICATIONS
s SPECIFICALLY DESIGNED AND OPTIMISED

FOR HIGH EFFICIENCY CPU CORE DC/DC
CONVERTERS FOR MOBILE PCS

ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 30 V
VDGR Drain-gate Voltage (RGS = 20 k) 30 V
VGS Gate- source Voltage