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SEMICONDUCTOR KML0D4N20V
TECHNICAL DATA N-Ch Trench MOSFET


General Description

It's mainly suitable for Load Switching Cell Phones, Battery Powered
Systems and Level-Shifter. E

B




2 DIM MILLIMETERS
FEATURES A _
1.2 +0.05




D
G
A
_
VDSS=20V, ID=0.4A B 0.8 +0.05




H
1 3 _
C 0.5 + 0.05
Drain-Soure ON Resistance




K
D _
0.3 + 0.05
E _
1.2 + 0.05
: RDS(ON)=0.70 @ VGS=4.5V G _
0.8 + 0.05
: RDS(ON)=0.85 @ VGS=2.5V P P H 0.40
J _
0.12 + 0.05
: RDS(ON)=1.25 @ VGS=1.8V K _
0.2 + 0.05
P 5
Super High Dense Cell Design




C




J
1. Source

2. Gate

3. Drain




VSM

MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL N-Ch UNIT
Drain-Source Voltage VDSS 20 V Marking
Gate-Source Voltage VGSS 6 V
DC @TA=25 400
ID*
Drain Current DC @TA=85 280
Pulsed IDP 650
mA
Type Name
LA
Source-Drain Diode Current IS 125
Drain Power Dissipation P D* 150 mW
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Note 1) *Surface Mounted on 1" 1" FR4 Board. t 5 sec




PIN CONNECTION (TOP VIEW)
D
3 3




2 1
G S 2 1




2012. 3. 5 Revision No : 0 1/4
KML0D4N20V

ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static

Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 20 - - V

Drain Cut-off Current IDSS VGS=0V, VDS=16V - 0.3 100 nA

Gate Leakage Current IGSS VGS= 4.5V, VDS=0V - 0.5 1.0 A

Gate Threshold Voltage Vth VDS=VGS, ID=250 A 0.45 - 1.0 V
VGS=4.5V, ID=400mA - 0.41 0.70
Drain-Source ON Resistance RDS(ON)* VGS=2.5V, ID=350mA - 0.53 0.85
VGS=1.8V, ID=300mA - 0.70 1.25

Forward Transconductance gfs* VDS=10V, ID=400mA - 1.0 - S

Source-Drain Diode Forward Voltage VSD* IS=150mA, VGS=0V - 0.8 1.2 V

Dynamic

Total Gate Charge Qg* - 750 -

Gate-Source Charge Qgs* VDS=10V, ID=250mA, VGS=4.5V - 75 - pC

Gate-Drain Charge Qgd* - 225 -

Turn-on Delay time td(on)* - 5 -
VDD=10V, ID=200mA,
ns
VGS=4.5V, RG=10
Turn-off Delay time td(off)* - 25 -

Note 2) *Pulse test : Pulse width 300 , Duty Cycle 2%.




2012. 3. 5 Revision No : 0 2/4
KML0D4N20V


Fig 1. ID - VDS Fig 2. RDS(on) - ID




Drain-Source On Resistance RDS(on) ()
1.0 4.0
VGS=2.5V
VGS=1.8V
0.8 3.2
Drain Current ID (A)




VGS=2.0V

0.6 2.4
VGS=5,4,3V
0.4 1.6

VGS=2.5V VGS=1.8V
0.2 0.8
VGS=1.0V
VGS=4.5V
0.0 0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.2 0.4 0.6 0.8 1.0


Drain - Source Voltage VDS (V) Drain - Current ID (A)




Fig 3. ID - VGS Fig 4. RDS(ON) - Tj
Normalized Drain-Source On Resistance RDS(on) ()


1.0 1.6
VGS = 4.5V
-55 C ID = 350mA
0.8 1.4
Drain Current ID (A)




TC=125 C
25 C
0.6 1.2


0.4 1.0


0.2 0.8


0.0 0.6
0.0 0.5 1.0 1.5 2.0 2.5 -50 -25 0 25 50 75 100 125


Gate - Source Voltage VGS (V) Junction Temperature Tj ( C)




Fig 5. Vth - Tj Fig 6. IDR - VSDF

0.3 1000
Reverse Drain Current IDR (mA)
Gate Threshold Voltage Vth (V)




ID = 250