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BSH112
N-channel enhancement mode field-effect transistor
M3D088
Rev. 01 -- 25 August 2000 Product specification

1. Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOSTM1 technology.

Product availability:
BSH112 in SOT23.

2. Features
s TrenchMOSTM technology
s Very fast switching
s Logic level compatible
s Subminiature surface mount package
s Gate-source ESD protection diodes.

3. Applications

c
s Relay driver
c

s High speed line driver
s Logic level translator.

4. Pinning information
Table 1: Pinning - SOT23, simplified outline and symbol
Pin Description Simplified outline Symbol
1 gate (g)
3
d
2 source (s)
3 drain (d)
g

03ab44
03ab60
s
1 2

SOT23 N-channel MOSFET

1. TrenchMOS is a trademark of Royal Philips Electronics.
Philips Semiconductors BSH112
N-channel enhancement mode field-effect transistor

5. Quick reference data
Table 2: Quick reference data
Symbol Parameter Conditions Typ Max Unit
VDS drain-source voltage (DC) Tj = 25 to 150