buk9506_buk9606-55a_2.pdf part of . Electronic Components Datasheets buk9506 buk9606-55a 2 buk9506_buk9606-55a_2.pdf, . Electronic Components Datasheets Active components Transistors Philips buk9506_buk9606-55a

Text preview for : buk9506_buk9606-55a_2.pdf part of . Electronic Components Datasheets buk9506 buk9606-55a 2 . Electronic Components Datasheets Active components Transistors Philips buk9506_buk9606-55a_2.pdf

Back to : buk9506_buk9606-55a_2.pdf | Home

Philips Semiconductors Product specification

TrenchMOS transistor BUK9506-55A
Logic level FET BUK9606-55A

GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT
level field-effect power transistor in a
plastic envelope available in VDS Drain-source voltage 55 V
TO220AB and SOT404 . Using ID Drain current (DC) 75 A
'trench' technology which features Ptot Total power dissipation 230 W
very low on-state resistance. It is Tj Junction temperature 175