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2SD2098
FEATURES
Excellent DC current gain characteristics SOT-89
Complements the 2SB1386
1. BASE
MAXIMUM RATINGS (TA=25 unless otherwise noted)
2. COLLECTOR 1
Symbol Parameter Value Units
2
VCBO Collector-Base Voltage 50 V
3. EMITTER 3
VCEO Collector-Emitter Voltage 20 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current -Continuous 5 A
PC Collector Power Dissipation 500 mW
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=50A,IE=0 50 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 20 V
Emitter-base breakdown voltage V(BR)EBO IE=50A, =0 6 V
Collector cut-off current ICBO VCB=40V,IE=0 0.5 A
Emitter cut-off current IEBO VEB=5V,IC=0 0.5 A
DC current gain hFE VCE=2V,IC=0.5A 120 390
Collector-emitter saturation voltage VCE(sat) IC=4A,IB=100mA 1 V
Transition frequency fT VCE=6V,IC=50mA,f=100MHz 150 MHz
Collector output capacitance Cob VCB=20V,IE=0,f=1MHz 30 pF
CLASSIFICATION OF hFE
Rank Q R
Range 120-270 180-390
Marking AHQ AHR
1
JinYu www.htsemi.com
semiconductor
2SD2098
2
JinYu www.htsemi.com
semiconductor
2SD2098
3
JinYu www.htsemi.com
semiconductor