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SEMICONDUCTOR KTA1360
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
AUDIO FREQUENCY AMPLIFIER APPLICATION. A
B D
C
E
FEATURES
F
High Voltage : VCEO=-150V.
Low Output Capacitance : Cob=5.0pF(Max.). G
High Transition Frequency : fT=120MHz(Typ.)
H
Complementary to KTC3423. DIM MILLIMETERS
J
A 8.3 MAX
K L B 5.8
C 0.7
D _
3.2 + 0.1
E 3.5
F _
11.0 + 0.3
MAXIMUM RATING (Ta=25 ) G 2.9 MAX
M
H 1.0 MAX
CHARACTERISTIC SYMBOL RATING UNIT J 1.9 MAX
O K _
0.75 + 0.15
N
Collector-Base Voltage VCBO -150 V 1 2 3
P
L _
15.50 + 0.5
M _
2.3 + 0.1
Collector-Emitter Voltage VCEO -150 V N _
0.65 + 0.15
1. EMITTER O 1.6
Emitter-Base Voltage VEBO -5 V 2. COLLECTOR P 3.4 MAX
3. BASE
Collector Current IC -50 mA
Emitter Current IE 50 mA
TO-126
Base current IB -5 mA
Collector Power Dissipation PC 1.5 W
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-150V, IE=0 - - -0.1 A
Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -0.1 A
DC Current Gain hFE(Note) VCE=-5V, IC=-10mA 70 - 240
Collector-Emitter Saturation Voltage VCE(sat) IC=-10mA, IB=-1mA - - -0.8 V
Base-Emitter Voltage VBE VCE=-5V, IC=-30mA - - -0.9 V
Transition Frequency fT VCE=-30V, IC=-10mA - 120 - MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 4.0 5.0 pF
Note : hFE Classification O:70 140, Y:120 240
2007. 3. 28 Revision No : 2 1/3
KTA1360
I C - VCE h FE - I C
-50 500
COMMON
COLLECTOR CURRENT I C (mA)
COMMON EMITTER
EMITTER
300
A Ta=25 C
DC CURRENT GAIN h FE
0