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HN1C03F
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

HN1C03F
For Muting And Switching Applications
Unit in mm

Including two devices in SM6 (Super mini type with 6 leads)
High emitter-base voltage: VEBO = 25V (min)
High reverse hFE: reverse hFE = 150 (typ.)(VCE =-2V, IC =-4mA)
Low on resistance: RON = 1 (typ.)(IB = 5mA)

Absolute Maximum Ratings (Ta = 25