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M8550(PNP)
TO-92 Transistors

TO-92
1. EMITTER

2. BASE

3. COLLECTOR

Features
Power dissipation

MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -40 V
VCEO Collector-Emitter Voltage -25 V
VEBO Emitter-Base Voltage -6 V
IC Collector Current -Continuous -800 mA
Dimensions in inches and (millimeters)
PC Collector Power Dissipation 625 mW
TJ Junction Temperature 125
Tstg Storage Temperature -55-125

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC= -100A, IE=0 -40 V
Collector-emitter breakdown voltage V(BR)CEO* IC= -0.1mA , IB=0 -25 V
Emitter-base breakdown voltage V(BR)EBO IE= -100A, IC=0 -6 V
Collector cut-off current ICBO VCB= -35V , IE=0 -0.1 A
Collector cut-off current ICEO VCE= -20V , IB=0 -0.1 A
hFE(1) VCE=-1V, IC=-5mA 45
DC current gain hFE(2) VCE=-1V, IC=-100mA 80 400
hFE(3) VCE=-1V, IC=-800mA 40
Collector-emitter saturation voltage VCE(sat) IC= -800mA, IB=-80mA -0.5 V
Base-emitter saturation voltage VBE(sat) IC=-800mA, IB=-80mA -1.2 V
VCE=-6V, IC= -20mA
Transition frequency fT 150 MHz
f=30MHz
*Pulse Test: pulse width 300