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2SD880
NPN Silicon Epitaxial Power Transistor
P b Lead(Pb)-Free
COLLECTOR
2
1
FEATURES: BASE
1
2
3
* Low frequency power amplifier 1. BASE
* Complement to 2SB834 2. COLLECTOR
3 3. EMITTER
EMITTER TO-220
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 60 V
VCEO Collector-Emitter Voltage 60 V
VEBO Emitter-Base Voltage 7 V
IC Collector Current -Continuous 3 A
PC Collector Power Dissipation 1.5 W
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=100
