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April 1995
BS170 / MMBF170
N-Channel Enhancement Mode Field Effect Transistor
General Description Features
These N-Channel enhancement mode field effect High density cell design for low RDS(ON).
transistors are produced using Fairchild's proprietary, high
Voltage controlled small signal switch.
cell density, DMOS technology. These products have been
designed to minimize on-state resistance while provide Rugged and reliable.
rugged, reliable, and fast switching performance. They can
High saturation current capability.
be used in most applications requiring up to 500mA DC.
These products are particularly suited for low voltage, low
current applications such as small servo motor control,
power MOSFET gate drivers, and other switching
applications.
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D
G
S
Absolute Maximum Ratings T A = 25