Text preview for : ceh2313.pdf part of . Electronic Components Datasheets ceh2313 . Electronic Components Datasheets Active components Transistors CET ceh2313.pdf
Back to : ceh2313.pdf | Home
CEH2313
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-30V, -4.6A, RDS(ON) = 60m @VGS = -10V.
RDS(ON) = 90m @VGS = -4.5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable. D(1,2,5,6,)
Lead free product is acquired.
TSOP-6 package.
4
5
6 G(3)
3
2
1
TSOP-6 S(4)
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter Symbol Limit Units
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS