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NUS5530MN
Integrated Power MOSFET
with PNP Low VCE(sat)
Switching Transistor
This integrated device represents a new level of safety and
board-space reduction by combining the 20 V P-Channel FET with a http://onsemi.com
PNP Silicon Low VCE(sat) switching transistor. This newly integrated
product provides higher efficiency and accuracy for battery powered
portable electronics. 1 8
Features