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SEMICONDUCTOR BC327
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR

GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.

FEATURES
High Current : IC=-800mA.
DC Current Gain : hFE=100 630 (VCE=-1V, Ic=-100mA).
For Complementary with NPN type BC337.

MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO -50 V
Collector-Emitter Voltage VCEO -45 V
Emitter-Base Voltage VEBO -5 V
Collector Current IC -800 mA
Base Current IB -200 mA
Emitter Current IE 800 mA
Collector Power Dissipation PC 625 mW
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150

ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-45V, IE=0 - - -100 nA
DC Current Gain (Note) hFE VCE=-1V, IC=-100mA 100 - 630
Collector-Emitter Saturation Voltage VCE(sat) IC=-500mA, IB=-50mA - - -0.7 V
Base-Emitter Voltage VBE(ON) VCE=-1V, IC=-300mA - - -1.2 V
Transition Frequency fT VCE=-5V, IC=-10mA, f=100MHz - 100 - MHz
Collector Output Capacitance Cob VCB=-10V, f=1MHz, IE=0 - 16 - pF
Note : hFE Classification none:100 630, 16:100 250, 25:160 400, 40:250 630

2008. 4. 24 Revision No : 3 1/2
BC327

2008. 4. 24 Revision No : 3 2/2