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R5016ANX
Transistors
10V Drive Nch MOSFET
R5016ANX
Structure Dimensions (Unit : mm)
Silicon N-channel MOSFET TO-220FM
10.0 3.2 4.5
2.8
Features
15.0
12.0
1) Low on-resistance.
8.0
2) Fast switching speed. 1.2
2.5
1.3
3) Wide SOA (safe operating area).
14.0
4) Gate-source voltage (VGSS) 0.8
guaranteed to be 30V. (1)Base
2.54 2.54 0.75 2.6
(2)Collector
5) Drive circuits can be simple. (3)Emitter
(1) (2) (3)
6) Parallel use is easy.
Applications
Switching
Packaging specifications Inner circuit
Package Bulk
Code -
Type Basic ordering unit (pieces) 500
1
R5016ANX
Absolute maximum ratings (Ta=25 C)
Parameter Symbol Limits Unit
(1) (2) (3)
Drain-source voltage VDSS 500 V
(1) Gate
Gate-source voltage VGSS