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SEMICONDUCTOR KTC812T
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
FOR MUTING AND SWITCHING APPLICATION.
FEATURES E
High Emitter-Base Voltage : VEBO=25V(Min.) K B K
DIM MILLIMETERS
High Reverse hFE 1 6 A _
2.9 + 0.2
B 1.6+0.2/-0.1
: Reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) _
C 0.70 + 0.05
G
2 5 _
0.4 + 0.1
Low on Resistance : RON=1 (Typ.), (IB=5mA) D
F
E 2.8+0.2/-0.3
A
3 4 F _
1.9 + 0.2
G
G 0.95
D
H _
0.16 + 0.05
MAXIMUM RATING (Ta=25 ) I 0.00-0.10
J 0.25+0.25/-0.15
CHARACTERISTIC SYMBOL RATING UNIT K 0.60
C
L
L 0.55
Collector-Base Voltage VCBO 50 V I H
J J
Collector-Emitter Voltage VCEO 20 V
1. Q 1 EMITTER
Emitter-Base Voltage VEBO 25 V 2. Q 1 BASE
3. Q 2 COLLECTOR
Collector Current IC 300 mA 4. Q 2 EMITTER
5. Q 2 BASE
IB 6. Q 1 COLLECTOR
Base Current 60 mA
Collector Power Dissipation PC * 0.9 W
Junction Temperature Tj 150 TS6
Storage Temperature Range Tstg -55 150
* Package mounted on a ceramic board (600 0.8 )
EQUIVALENT CIRCUIT (TOP VIEW)
6 5 4 Marking
6 5 4
h FE Rank Lot No.
Q1 Q2 Type Name
M
1 2 3
1 2 3
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=50V, IE=0 - - 0.1 A
Emitter Cut-off Current IEBO VEB=25V, IC=0 - - 0.1 A
DC Current Gain hFE VCE=2V, IC=4mA 350 - 1200
Collector-Emitter Saturation Voltage VCE(sat) IC=30mA, IB=3mA - 0.042 0.3 V
Base-Emitter Voltage VBE VCE=2V, IC=4mA - 0.61 - V
Transition Frequency fT VCE=6V, IC=4mA - 30 - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 4.8 7 pF
OUTPUT
Turn-on Time ton - 160 -
INPUT 4k
1k
Switching 10V
Storage Time tstg - 500 - nS
3k
50
Time
1