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Si2304DS
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W) ID (A)
0.117 @ VGS = 10 V 2.5
30
0.190 @ VGS = 4.5 V 2.0
TO-236
(SOT-23)
G 1
3 D
S 2
Top View
Si2304DS (A4)*
*Marking Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 30
V
Gate-Source Voltage VGS "20
TA= 25_C 2.5
Continuous Drain Current (TJ = 150_C)a ID
TA= 70_C 2.0
A
Pulsed Drain Currentb IDM 10
Continuous Source Current (Diode Conduction)a IS 1.25
TA= 25_C 1.25
Power Dissipationa PD W
TA= 70_C 0.80
Operating Junction and Storage Temperature Range TJ, Tstg