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2SD1265 NPN EPITAXIAL SILICON TRANSISTOR
POWER AMPLIFIER
VERTICAL DEFLECTION OUTPUT
SC-67
!
ABSOLUTE MAXIMUM RATINGS (TA=25)
Characteristic Symbol Rating Unit
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 60 V
Emitter-Base voltage VEBO 5 V
Collector Current (DC) IC 4 A
Collector Dissipation (Tc=25) PC 30 W
Junction Temperature Tj 150
Storage Temperature Tstg -50~150
ELECTRICAL CHARACTERISTICS (TA=25)
Characteristic Symbol Test Condition Min Typ Max Unit
Collector Cutoff Current ICBO VCB= 150V , IE=0 10