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DISCRETE SEMICONDUCTORS

DATA SHEET

BFQ19
NPN 5 GHz wideband transistor
Product specification September 1995
File under Discrete Semiconductors, SC14
Philips Semiconductors Product specification

NPN 5 GHz wideband transistor BFQ19

DESCRIPTION PINNING
NPN transistor in a SOT89 plastic PIN DESCRIPTION
envelope intended for application in
Code: FB
thick and thin-film circuits. It is
primarily intended for use in UHF and 1 emitter page

microwave amplifiers such as in aerial 2 collector
amplifiers, radar systems, 3 base
oscilloscopes, spectrum analyzers
etc.
1 2 3
The transistor features very low Bottom view MBK514
intermodulation distortion and high
power gain. Due to its very high
transition frequency, it also has
excellent wideband properties and Fig.1 SOT89.
low noise up to high frequencies.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VCEO collector-emitter voltage open base - 15 V
IC DC collector current - 100 mA
Ptot total power dissipation up to Ts = 145