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DISCRETE SEMICONDUCTORS

DATA SHEET

BFQ18A
NPN 4 GHz wideband transistor
Product specification September 1995
File under Discrete Semiconductors, SC14
Philips Semiconductors Product specification

NPN 4 GHz wideband transistor BFQ18A

DESCRIPTION PINNING
NPN transistor in a plastic SOT89 PIN DESCRIPTION
envelope intended for application in
Code: FF
thick and thin-film circuits. It is
1 emitter page
primarily intended for MATV
purposes. 2 collector
3 base

1 2 3

Bottom view MBK514

Fig.1 SOT89.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VCBO collector-base voltage open emitter - 25 V
VCEO collector-emitter voltage open base - 18 V
IC DC collector current - 150 mA
Ptot total power dissipation up to Ts = 155