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DISCRETE SEMICONDUCTORS




DATA SHEET




BLW76
HF/VHF power transistor
Product specification August 1986
Philips Semiconductors Product specification


HF/VHF power transistor BLW76

DESCRIPTION mismatch conditions. Transistors are
delivered in matched hFE groups.
N-P-N silicon planar epitaxial
transistor intended for use in class-AB The transistor has a 1/2" flange
or class-B operated high power envelope with a ceramic cap. All
transmitters in the h.f. and v.h.f. leads are isolated from the flange.
bands. The transistor presents
excellent performance as a linear
amplifier in the h.f. band. It is
resistance stabilized and is
guaranteed to withstand severe load




QUICK REFERENCE DATA
R.F. performance up to Th = 25