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BCX52
PNP Transistors
Elektronische Bauelemente Plastic-Encapsulate Transistors
RoHS Compliant Product



1
2 SOT-89
3

1.BASE
4.4~4.6
2.COLLECTOR
1.4~1.8
1.4~1.6
3.EMITTER
Features




3.94~4.25




2.3~2.6
Power dissipation 0.36~0.56

PCM: 0.5 W (Tamb=25oC)
Collector current 0.32~0.52
0.35~0.44




0.9~1.1
1.5Ref.
ICM: -1 A
2.9~3.1
Collector-base voltage
V(BR)CBO: -60 V
Dimensision in Millimeter

Operating and storage junction temperature range
o
TJ, Tstg: -55 C to +150oC

o
ELECTRICAL CHARACTERISTICS (Tamb=25 C unless otherwise specified)

Parameter Symbol Test conditions MIN MAX UNIT

Collector-base breakdown voltage V(BR)CBO Ic=-100