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BSS138
Small Signal MOSFET
N-Channel 3 DRAIN
SOT-23
Features: 1 3
*Low On-Resistance : 3.5 GATE 1
*Low Input Capacitance: 40PF 2
*Low Out put Capacitance : 12PF 2
*Low Threshole :1 .5V SOURCE
*Fast Switching Speed : 20ns
Application:
* DC to DC Converter
* Cellular & PCMCIA Card
* Cordless Telephone
* Power Management in Portable and Battery etc.
Maximum Ratings (TA=25 C Unless Otherwise Specified)
Rating Symbol Value Unit
Drain-Source Voltage VDSS 50 V
Gate-Source Voltage VGS _
+20 V
Continuous Drain Current (TA=25 C) ID 200 mA
Pulsed Drain Current(tp 10us) IDM 800 mA
Power Dissipation (TA=25 C) PD 225 mW
Maximax Junction-to-Ambient RJA 556 C/W
Operating Junction and Storage
TJ, Tstg -55 to 150 C
Temperature Range
Device Marking
BSS138=J1
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BSS138
Electrical Characteristics (TA=25 C Unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Static (1)
Drain-Source Breakdown Voltage V(BR)DSS V
VGS=0V, ID=250 A 50 - -
Gate-Source Threshold Voltage VGS (th)
VDS=VGS, ID=1.0mA 0.5 - 1.5 V
Gate-Source Leakage Current IGSS + uA
+
VDS=0V, VGS= -20V - - -0.1
Zero Gate Voltage Drain Current
VDS=25V, VGS=0V IDSS - - 0.1 A
VDS=50V, VGS=0V 0.5
Drain-Source On-Resistance
VGS=2.75V, ID < 200mA, TA=-40 C to + 85 C rDS (on) - 5.6 10
VGS=5.0V, ID=200mA - - 3.5
Forward Transconductance gfs 100 - - mS
VDS=25V, ID=200mA, f=1.0KHZ
Dynamic
Input Capacitance Ciss 40
VDS=25V, VGS=0V, f=1MHZ - 50
Output Capacitance - 25
Coss 12 PF
VDS=25V, VGS=0V, f=1MHZ
Reverse Transfer Capacitance
Crss - 3.5 5.0
VDS=25V, VGS=0V, f=1MHZ
Switching (2)
Turn-On Time -
td(on) - 20
VDD=30V, ID=200mA
nS
Turn-Off Time
td(off) - 20
VDD=30V, ID=100mA
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BSS138 WE IT R ON
T Y P IC A L E L E C T R IC A L C HA R A C T E R IS T IC S
0.8 0.9
TJ = 25 C VGS = 3.5 V VDS = 10 V 25 C
0.7 0.8
-55 C
I D , DRAIN CURRENT (AMPS)
I D , DRAIN CURRENT (AMPS)
VGS = 3.25 V
0.6 0.7
150 C
VGS = 3.0 V 0.6
0.5
VGS = 2.75 V 0.5
0.4
0.4
0.3 VGS = 2.5 V
0.3
0.2 0.2
0.1 0.1
0 0
0 1 2 3 4 5 6 7 8 9 10 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VGS , GATE-T O-SOURCE VOLTAGE (VOLTS)
F igure 1. On-R egion C harac teris tic s F igure 2. Trans fer C harac teris tic s
2.2 1.25
R DS(on), DRAIN-TO-SOURCE RESIST ANCE
ID = 1.0 mA
2
VGS = 10 V
TS)
1.8 ID = 0.8 A 1.125
Vgs(th), VARIANCE (VOL
(NORMALIZED)
1.6
VGS = 4.5 V
1.4 ID = 0.5 A 1
1.2
1 0.875
0.8
0.6 0.75
- 55 -5 45 95 145 - 55 -30 -5 20 45 70 95 120 145
TJ , JUNCTION TEMPERATURE ( C) TJ , JUNCTION TEMPERATURE ( C)
F igure 3. On-R es is tanc e Variation with F igure 4. T hres hold Voltage Variation
Temperature with Temperature
10
VGS , GATE-T O-SOURCE VOLTAGE (VOLTS)
VDS = 40 V
TJ = 25 C
8
6
4
ID = 200 mA
2
0
0 500 1000 1500 2000 2500 3000
QT, TOTAL GATE CHARGE (pC)
F igure 5. G ate C harge
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BSS138 WE IT R ON
T Y P IC A L E L E C T R IC A L C HA R A C T E R IS T IC S
R DS(on), DRAIN-TO-SOURCE RESIST ANCE (OHMS)
R DS(on), DRAIN-TO-SOURCE RESIST ANCE (OHMS)
10 8
VGS = 2.5 V VGS = 2.75 V
9
7
150 C
8
150 C 6
7
6 5
5 4
25 C
4 25 C
3
3 -55 C
2 2 -55 C
1 1
0 0.05 0.1 0.15 0.2 0.25 0 0.05 0.1 0.15 0.2 0.25
ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS)
F igure 6. On-R es is tanc e vers us Drain C urrent F igure 7. On-R es is tanc e vers us Drain C urrent
R DS(on), DRAIN-TO-SOURCE RESIST ANCE (OHMS)
6 R DS(on), DRAIN-TO-SOURCE RESIST ANCE (OHMS) 4.5
VGS = 4.5 V VGS = 10 V
5.5
150 C 4 150 C
5
4.5 3.5
4
3
3.5
3 2.5 25 C
25 C
2.5 2
2 -55 C
1.5 -55 C
1.5
1 1
0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5
ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS)
F igure 8. On-R es is tanc e vers us Drain C urrent F igure 9. On-R es is tanc e vers us Drain C urrent
1 120
I D , DIODE CURRENT (AMPS)
100
TJ = 150 C 25 C -55 C
0.1
80
60
Ciss
0.01 40
Coss
20
Crss
0.001 0
0 0.2 0.4 0.6 0.8 1.0 1.2 0 5 10 15 20 25
VSD, DIODE FORWARD VOLTAGE (VOLTS)
F igure 10. B ody Diode F orward Voltage F igure 1 1. C apac itanc e
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