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BD533FP
BD534FP
COMPLEMENTARY SILICON POWER TRANSISTORS
s BD534FP IS SGS-THOMSON PREFERRED
SALESTYPE
s FULLY MOLDED ISOLATED PACKAGE
s 2000 V DC ISOLATION (U.L. COMPLIANT)
DESCRIPTION
The BD533FP is silicon epitaxial-base NPN
power transistor in Jedec TO-220FP fully molded
isolated package, intented for use in medium 3
power linear and switching applications. 2
1
The complementary PNP type is BD534FP.
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Uni t
NPN BD533FP
PNP BD534FP
V CBO Collector-Base Voltage (IE = 0) 45 V
V CES Collector-Emitter Voltage (V BE = 0) 45 V
V CEO Collector-Emitter Voltage (I B = 0) 45 V
V EBO Emitter-Base Voltage (I C = 0) 5 V
I C, I E Collector and Emitter Current 8 A
IB Base Current 1 A
P t ot Total Dissipation at T c 25 C o
25 W
o
T stg Storage Temperature -65 to 150 C
o
Tj Max. O perating Junction Temperature 150 C
For PNP types voltage and current values are negative.
April 1998 1/4
BD533FP / BD534FP
THERMAL DATA
o
R t hj-ca se Thermal Resistance Junction-case Max 5.1 C/W
o
R t hj- amb Thermal Resistance Junction-ambient Max 70 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it
I CBO Collector Cut-off V CB = 45 V 100