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TIP42/42A/42B/42C
PNP Silicon Epitaxial Power Transistor
P b Lead(Pb)-Free
COLLECTOR
2
1
Features: BASE
1
2
3
* Medium Power Linear Switching Applications 1. BASE
* Complement to TIP41/41A/41B/41C 2. COLLECTOR
3 3. EMITTER
EMITTER TO-220
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Parameter Symbol TIP42 TIP42A TIP42B TIP42C Units
Collector-Base Voltage VCBO -40 -60 -80 -100 V
Collector-Emitter Voltage VCEO -40 -60 -80 -100 V
Emitter-Base Voltage VEBO -5 V
Collector Current -Continuous IC -6 A
Collector Power Dissipation PC 2 W
Junction Temperature TJ 150
Storage Temperature Range Tstg -55to+150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MI N MAX UNIT
Collector-base breakdown voltage TIP42 -40
TIP42A -60
V(BR)CBO IC= -1mA, IE=0 V
TIP42B -80
TIP42C -100
Collector-emitter breakdown voltage TIP42 -40
TIP42A -60
V(BR)CEO* IC= -30mA, IB=0 V
TIP42B -80
TIP42C -100
Emitter-base breakdown voltage V(BR)EBO IE= -1mA, IC=0 -5 V
Collector cut-off current TIP42 VCB=-40V, IE=0
TIP42A VCB=-60V, IE=0
ICBO -0.4 mA
TIP42B VCB=-80V, IE=0
TIP42C VCB=-100V, IE=0
Collector cut-off current TIP42/42A VCE= -30V, IB= 0
ICEO -0.7 mA
TIP42B/42C VCE= -60V, IB= 0
Emitter cut-off current IEBO VEB=-5V, IC=0 -1 mA
hFE(1) VCE=-4V, IC=-0.3A 30
DC current gain
hFE(2) VCE=-4 V, IC= -3A 15 75
Collector-emitter saturation voltage VCE(sat) IC=-6A, IB=-0.6A -1.5 V
Base-emitter voltage VBE VCE=-4V, IC=-6A -2 V
Transition frequency fT VCE=-10V,IC=-0.5 3 MHZ
*
Pulse test
WEITRON 1/3 17-Nov-08
http://www.weitron.com.tw
TIP42/42A/42B/42C
Typical Characteristics
WEITRON 2/3 17-Nov-08
http://www.weitron.com.tw
TIP42/42A/42B/42C
TO-220 Outline Dimensions unit:mm
D
A TO-220
C1 Dim Min Max