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DISCRETE SEMICONDUCTORS

DATA SHEET

BFT92W
PNP 4 GHz wideband transistor
Product specification May 1994
NXP Semiconductors Product specification

PNP 4 GHz wideband transistor BFT92W

FEATURES DESCRIPTION
High power gain Silicon PNP transistor in a plastic,
Gold metallization ensures SOT323 (S-mini) package. The handbook, 2 columns 3

excellent reliability BFT92W uses the same crystal as the
SOT23 version, BFT92.
SOT323 (S-mini) package.

PINNING 1 2
APPLICATION
PIN DESCRIPTION Top view MBC870
It is intended as a general purpose
transistor for wideband applications 1 base
Marking code: W1.
up to 2 GHz. 2 emitter
Fig.1 SOT323.
3 collector

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCBO collector-base voltage open emitter 20 V
VCEO collector-emitter voltage open base 15 V
IC collector current (DC) 35 mA
Ptot total power dissipation up to Ts = 93 C; note 1 300 mW
hFE DC current gain IC = 15 mA; VCE = 10 V 20 50
Cre feedback capacitance IC = 0; VCB = 10 V; f = 1 MHz 0.5 pF
fT transition frequency IC = 15 mA; VCE = 10 V; 4 GHz
f = 500 MHz
GUM maximum unilateral power gain IC = 15 mA; VCE = 10 V; 17 dB
f = 500 MHz; Tamb = 25 C
F noise figure IC = 5 mA; VCE = 10 V; 2.5 dB
f = 500 MHz
Tj junction temperature 150 C

Note
1. Ts is the temperature at the soldering point of the collector pin.

May 1994 2
NXP Semiconductors Product specification

PNP 4 GHz wideband transistor BFT92W

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 20 V
VCEO collector-emitter voltage open base 15 V
VEBO emitter-base voltage open collector 2 V
IC collector current (DC) 25 mA
Ptot total power dissipation up to Ts = 93 C; note 1 300 mW
Tstg storage temperature 65 +150 C
Tj junction temperature 150 C

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-s thermal resistance from junction to soldering point up to Ts = 93 C; note 1 190 K/W

Note to the "Limiting values" and "Thermal characteristics"
1. Ts is the temperature at the soldering point of the collector pin.

CHARACTERISTICS
Tj = 25 C (unless otherwise specified).

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector cut-off current IE = 0; VCB = 10 V 50 nA
hFE DC current gain IC = 15 mA; VCE = 10 V 20 50
fT transition frequency IC = 15 mA; VCE = 10 V; 4 GHz
f = 500 MHz; Tamb = 25 C
Cc collector capacitance IE = ie = 0; VCB = 10 V; 0.65 pF
f = 1 MHz
Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; 0.75 pF
f = 1 MHz
Cre feedback capacitance IC = 0; VCB = 10 V; 0.5 pF
f = 1 MHz
GUM maximum unilateral power gain; IC = 15 mA; VCE = 10 V; 17 dB
note 1 f = 500 MHz; Tamb = 25 C
IC = 15 mA; VCE = 10 V; 11 dB
f = 1 GHz; Tamb = 25 C
F noise figure s = opt; IC = 5 mA; 2.5 dB
VCE = 10 V; f = 500 MHz
s = opt; IC = 5 mA; 3 dB
VCE = 10 V; f = 1 GHz

Note
s 21 2
1. GUM is the maximum unilateral power gain, assuming s12 is zero. G UM = 10 log -------------------------------------------------------- dB.
1