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Philips Semiconductors Product specification
PowerMOS transistor PHP20N06E
GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT
field-effect power transistor in a plastic
envelope. VDS Drain-source voltage 60 V
The device is intended for use in ID Drain current (DC) 22 A
Switched Mode Power Supplies Ptot Total power dissipation 75 W
(SMPS), motor control, welding, DC/DC Tj Junction temperature 175