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UTC 2SB834 PNP EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE TRANSISTOR
DESCRIPTION
Low frequency power amplifier applications.
1
TO-220
1:BASE 2: COLLECTOR 3: EMITTER
ABSOLUTE MAXIMUM RATINGS ( Operating temperature range applies unless otherwise specified )
PARAMETER SYMBOL RATING UNIT
Collector-base voltage VCBO 60 V
Collector-emitter voltage VCEO 60 V
Emitter-base voltage VEBO 7 V
Total Power Dissipation(Ta=25