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Si6926DQ
Vishay Siliconix
Dual N-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W) ID (A)
0.035 @ VGS = 4.5 V "4.0
20 0.040 @ VGS = 3.0 V "3.7
0.045 @ VGS = 2.5 V "3.5
D1 D2
TSSOP-8
D1 1 D 8 D2
S1 2 Si6926DQ 7 S2 G1 G2
S1 3 6 S2
G1 4 5 G2
Top View
S1 S2
N-Channel MOSFET N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 20
V
Gate-Source Voltage VGS "8
TA = 25_C "4.0
Continuous Drain Current (TJ = 150_C)a
150 C) ID
TA = 70_C "3.2
A
Pulsed Drain Current IDM "20
Continuous Source Current (Diode Conduction)a IS 1.25
TA = 25_C 1.0
Maximum Power Dissipationa PD W
TA = 70_C 0.64
Operating Junction and Storage Temperature Range TJ, Tstg