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SEMICONDUCTOR KRC660U~KRC664U
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
B
FEATURES B1
With Built-in Bias Resistors.
1 5 DIM MILLIMETERS
Simplify Circuit Design. A _
2.00 + 0.20
C
A1
2 A1 _
1.3 + 0.1
A
Reduce a Quantity of Parts and Manufacturing Process.
C
B _
2.1 + 0.1
3 4 D _
High Packing Density. B1 1.25 + 0.1
C 0.65
D 0.2+0.10/-0.05
G 0-0.1
EQUIVALENT CIRCUIT EQUIVALENT CIRCUIT (TOP VIEW) _
H 0.9 + 0.1
T 0.15+0.1/-0.05
C
H
5 4 T
G
R1 Q1 Q2
B
1. Q 1 IN (BASE)
2. Q 1, Q 2 COMMON (EMITTER)
3. Q 2 IN (BASE)
4. Q 2 OUT (COLLECTOR)
5. Q 1 OUT (COLLECTOR)
E 1 2 3
USV
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 50 V Collector Power Dissipation PC * 200 mW
Collector-Emitter Voltage VCEO 50 V Junction Temperature Tj 150
Emitter-Base Voltage VEBO 5 V Storage Temperature Range Tstg -55 150
Collector Current IC 100 mA * Total Rating.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=50V, IE=0 - - 100 nA
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 100 nA
DC Current Gain hFE VCE=5V, IC=1mA 120 - -
Collector-Emitter Saturation Voltage VCE(sat) IC=10mA, IB=0.5mA - 0.1 0.3 V
Transition Frequency fT * VCE=10V, IC=5mA - 250 - MHz
KRC660U 3.29 4.7 6.11
KRC661U 7 10 13
Input Resistor KRC662U R1 70 100 130 k
KRC663U 15.4 22 28.6
KRC664U 32.9 47 61.1
Note : * Characteristic of Transistor Only.
Marking
5 4
Lot No.
MARK SPEC
TYPE KRC660U KRC661U KRC662U KRC663U KRC664U Type Name
MARK NK NM NN NO NP
1 2 3
2002. 7. 10 Revision No : 4 1/4
KRC660U~KRC664U
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
KRC660U - 0.025 -
KRC661U - 0.03 -
Rise Time KRC662U tr - 0.3 -
KRC663U - 0.06 -
KRC664U - 0.11 -
KRC660U - 3.0 -
KRC661U VO=5V - 2.0 -
Switching
Storage Time KRC662U tstg VIN=5V - 6.0 - S
Time
KRC663U RL=1k - 4.0 -
KRC664U - 5.0 -
KRC660U - 0.2 -
KRC661U - 0.12 -
Fall Time KRC662U tf - 2.0 -
KRC663U - 0.9 -
KRC664U - 1.4 -
2002. 7. 10 Revision No : 4 2/4
KRC660U~KRC664U
hFE - IC VCE(sat) - IC
COLLECTOR-EMITTER SATURATION
KRC660U KRC660U
2k 2
IC /I B =20
1k 1
DC CURRENT GAIN hFE
VOLTAGE VCE(sat) (V)
500 Ta=100 C 0.5
300 0.3
Ta=25 C
Ta=-25 C
100 0.1
Ta=100 C
50 0.05
30 0.03 Ta=25 C
VCE =5V Ta=-25 C
10 0.01
0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100
COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA)
hFE - IC VCE(sat) - IC
COLLECTOR-EMITTER SATURATION
KRC661U KRC661U
2k 2
IC /I B =20
1k 1
DC CURRENT GAIN hFE
VOLTAGE VCE(sat) (V)
500 0.5
300 Ta=100 C 0.3
Ta=25 C
Ta=-25 C
100 0.1
Ta=100 C
50 0.05
30 0.03 Ta=25 C
V CE =5V Ta=-25 C
10 0.01
0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100
COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA)
hFE - IC VCE(sat) - IC
COLLECTOR-EMITTER SATURATION
KRC662U KRC662U
2k 2
I C /I B =20
1k 1
DC CURRENT GAIN hFE
VOLTAGE VCE(sat) (V)
500 0.5
300 Ta=100 C 0.3
Ta=25 C
100 Ta=-25 C 0.1
Ta=100 C
50 0.05
30 0.03 Ta=25 C
V CE =5V Ta=-25 C
10 0.01
0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100
COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA)
2002. 7. 10 Revision No : 4 3/4
KRC660U~KRC664U
hFE - IC VCE(sat) - IC
COLLECTOR-EMITTER SATURATION
KRC663U KRC663U
2k 2
I C /I B =20
1k 1
DC CURRENT GAIN hFE
VOLTAGE VCE(sat) (V)
500 0.5
300 Ta=100 C 0.3
Ta=25 C
100 Ta=-25 C 0.1
Ta=100 C
50 0.05
30 0.03 Ta=25 C
V CE =5V Ta=-25 C
10 0.01
0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100
COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA)
hFE - IC VCE(sat) - IC
COLLECTOR-EMITTER SATURATION
KRC664U KRC664U
2k 2
I C /I B =20
1k 1
DC CURRENT GAIN hFE
VOLTAGE VCE(sat) (V)
500 0.5
300 Ta=100 C 0.3
Ta=25 C
100 Ta=-25 C
0.1
Ta=100 C
50 0.05
30 0.03 Ta=25 C
Ta=-25 C
VCE =5V
10 0.01
0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100
COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA)
2002. 7. 10 Revision No : 4 4/4