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CEM6607
Dual P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY
FEATURES
-60V, -3.8A, RDS(ON) = 86m @VGS = -10V.
RDS(ON) = 125m @VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
D1 D1 D2 D2
Lead free product is acquired. 8 7 6 5
Surface mount Package.
SO-8
1 2 3 4
1 S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter Symbol Limit Units
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS