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CEM4228
Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES
5
40V, 6.3A, RDS(ON) = 30m @VGS = 10V.

RDS(ON) = 45m @VGS = 4.5V.

Super high dense cell design for extremely low RDS(ON).

High power and current handing capability.
D1 D1 D2 D2
Lead free product is acquired. 8 7 6 5

Surface mount Package.




SO-8
1 2 3 4
1 S1 G1 S2 G2




ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter Symbol Limit Units
Drain-Source Voltage VDS 40 V
Gate-Source Voltage VGS