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3DD13002B
Switch Mode NPN Transistors
TO-92
1. EMITTER 1
2. COLLECTOR 2
3
3. BASE
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating Symbol Value Unit
Collector-Emitter Voltage VCEO 400 Vdc
Collector-Base Voltage VCBO 600 Vdc
Emitter-Base VOltage VEBO 6.0 Vdc
Collector Current IC 1.0 Adc
Total Device Dissipation T A =25 C PD 1.0 W
Junction Temperature Tj 150 C
Storage, Temperature Tstg -55 to +150 C
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Min Max Unit
Collector-Emitter Breakdown Voltage (IC= 1.0 mAdc, IB=0) V(BR)CEO 400 - Vdc
Collector-Base Breakdown Voltage (IC= 100 uAdc, IE=0) V(BR)CBO 600 - Vdc
-
Emitter-Base Breakdown Voltage (IE= 100 uAdc, IC=0) V(BR)EBO 6.0 Vdc
Collector Cutoff Current (VCB= 600 Vdc, IE=0) ICBO - 100 uAdc
Emitter Cutoff Current (VEB= 6.0Vd c, IC =0) IEBO - 100 uAdc
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Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued)
Characteristics Symbol Min Max Unit
On Characteristics
DC Current Gain
(IC= 100 mAdc, VCE=10Vdc) hFE(1) 20 25 -
(IC= 200 mAdc, VCE= 10Vdc) hFE(2) 9 40 -
(IC= 10 mAdc, VCE= 10Vdc) hFE(3) 6 . -
Collector-Emitter Saturation Voltage
VCE(sat) - 0.8 Vdc
(IC= 200 mAdc, IB= 40 mAdc)
Base-Emitter Saturation Voltage
VBE(sat) - 1.1 Vdc
(IC= 200 mAdc, IB= 40 mAdc)
Current-Gain-Bandwidth Product
fT 5.0 - MHz
(IC= 100 mAdc, VCE= 10 Vdc, f=1.0MHz)
Switching Characteristics
Storage Time ts - 2.5 us
VCC =100V, IC =1A
IB1=-I B2=200mA -
Fall Time tf 0.5 us
Classification of hFE(2)
Rank
Range 9-15 15-20 20-25 25-30 30-35 35-40
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VCE ,COLLECTOR-EMITTER VOLTAGE(V)
80 2
60 VCE =2V
TJ =25 C
hFE ,DC CURRENT GAIN
1.6
40
30 IC=0.2A
25 C
1.2
20
0.8
10
8 0.4
6
4 0
0.02 0.03 0.050.07 0.1 0.2 0.3 0.5 0.7 1 2 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 2
IC , COLLECTOR CURRENT(AMP) IB , BASE CURRENT(AMP)
FIG.1 DC Current Gain FIG.2 Collector Saturation Region
1.4 3.5
VBE(sat) @IC/IB =5
3.0
1.2
V, VOLTAGE(V)
2.5 IC/IB =5
V, VOLTAGE(V)
1
2.0
25 C 1.5
0.8
1.0
0.6
0.5
0.4 0
0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1 2 0.01 0.1 0.5 1 2
IC , COLLECTOR CURRENT(AMP) I C , COLLECTOR CURRENT(AMP)
FIG.3 Base-Emitter Voltage FIG.4 Collector-Emitter Saturation Region
10 1.6
IC , COLLECTOR CURRENT(AMP)
5
IC , COLLECTOR CURRENT(AMP)
2 1.2
1
0.5 _
TJ < 100 C
0.8 IB1 =1A
0.2 TC =25 C
0.1
0.0 0.4 VBE(off) =6V
5 5V
0.02 3V
0 1.5V
0.01
5 10 20 50 100 200 300 500 0 100 200 300 400 500 600 700 800
VCE ,COLLECTOR-EMITTER VOLTAGE(V) VCE ,COLLECTOR-EMITTER CLAMP VOLTAGE(V)
FIG.5 Active Region Safe Operation Area FIG.6 Reverse Bias Safe Operating Area
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1
POWER DERATING FACTOR
0.8
0.6
THERMAL
DERATING
0.4
0.2
0
20 40 60 80 100 120 140 160
T C , CASE TEMPERATURE( C)
FIG.7 Forward Bias Power Derating
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3DD13002B
TO-92 Outline Dimensions unit:mm
E
TO-92
H
Dim Min Max
C A 3.30 3.70
B 1.10 1.40
C 0.38 0.55
D 0.36 0.51
L
E 4.40 4.70
G 3.43 -
H 4.30 4.70
J
J 1.270TYP
K
K 2.44 2.64
G
L 14.10 14.50
B
A
D
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